Datasheet > TN2222A

TN2222A

更新时间： 2024-09-18 21:54:07

品牌	Logo	应用领域
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页数	文件大小	规格书
5页	159K
描述
NPN SILICON PLANAR SWITCHING TRANSISTOR

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中文翻译

获取价格

数据手册

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TN2222A 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON PLANAR SWITCHING TRANSISTOR

TN2222A

TO-237

Plastic Package

For use as a Medium Power Amplifier

ABSOLUTE MAXIMUM RATINGS

VALUE

6.0

800

0.75

UNIT

DESCRIPTION

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

Power Dissipation @ T_a=25ºC

Power Dissipation @ T_c=25ºC

2.2

ºC

P_D

@ T_a=25ºC PCB Land Area for

Collector Lead >1 sq inch

@ T_a=25ºC with heat sink

1.2

1.5

Operating And Storage Junction

Temperature Range

T_j, T_stg

- 55 to +150

THERMAL RESISTANCE

R_{th (j-c)}

R_{th (j-a)}

167

ºC/W

Junction to Case

Junction to Ambient in free air

Thermal Resistance >with PCB land

area for collector lead >1 sq inch

Thermal Resistance Junction to

Ambient with heat sink

R_{th (j-a)}

104

ºC/W

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )

MAX

DESCRIPTION

SYMBOL

*V_CEO

V_CBO

TEST CONDITION

I_C=10mA, I_B=0

MIN

UNIT

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut Off Current

I_C=10mA, I_E=0

I_E=10mA, I_C=0

V_EBO

I_CEX

I_CBO

V_CE=60V, V_EB(off)=3V

V_CB=60V, I_E=0

V_CB=60V, I_E=0, T_a=150ºC

V_EB=3V, I_C=0

I_EBO

I_BL

Emitter Cut Off Current

Base Cut Off Current

DC Current Gain

V_CE=60V, V_EB(off)=3V

h_FE

I_C=0.1mA, V_CE=10V

I_C=1mA, V_CE=10V

I_C=10mA, V_CE=10V

I_C=150mA, V_CE=10V

I_C=150mA, V_CE=1V

I_C=500mA, V_CE=10V

100

300

*Pulse Test: Pulse Width < 300ms, Duty Cycle < 2%

TN2222ARev080304E

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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