Datasheet > TN1215-G

TN1215-G

更新时间： 2024-11-09 22:19:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	69K
描述
SCR

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数据手册

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TN1215-G 数据手册

TN1215-G

SCR

FEATURES

HIGHSURGECAPABILITY

HIGH ON-STATE CURRENT

HIGH STABILITYAND RELIABILITY

DESCRIPTION

The TN1215series of Silicon Controlled Rectifiers

uses a high performance glass passivated tech-

nology.

D²PAK

This SCR is designed for power supplies up to

400Hz on resistiveor inductiveload.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I_T(RMS)

RMSon-statecurrent

(180 conductionangle)

Tc= 110°C

I_T(AV)

I_TSM

Averageon-statecurrent

Tc= 110°C

(180° conductionangle)

Non repetitive surge peak on-statecurrent

(Tj initial = 25°C)

tp = 8.3 ms

tp = 10 ms

tp = 10ms

146

140

I²t

I²t Valuefor fusing

A²s

A/ s

dI/dt

Critical rateof rise of on-statecurrent

100

I_G= 100 mA

dI_G/dt = 1 A/µs.

T_stg

T_j

Storage junctiontemperaturerange

Operatingjunction temperaturerange

- 40 to + 150

- 40 to + 125

Maximum temperaturefor soldering during 10s

260

TN1215-

Symbol

Parameter

Unit

600G

600

800G

V_DRM

V_RRM

Repetitivepeak off-statevoltage

800

Tj = 125°C

January 1998- Ed: 4

1/5

12 3 4 5

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