TMS416169

更新时间： 2024-11-14 22:49:39

品牌	Logo	应用领域
德州仪器 - TI		动态存储器
页数	文件大小	规格书
67页	1462K
描述
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

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数据手册

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TMS416169 数据手册

TMS55160, TMS55161, TMS55170, TMS55171

262144 BY 16-BIT MULTIPORT VIDEO RAMS

SMVS464 – MARCH1996

Organization:

DRAM: 262144 Words × 16 Bits

SAM: 256 Words × 16 Bits

Split-Register-Transfer Function Transfers

Data from the DRAM to One-Half of the

Serial Register While the Other Half is

Outputing Data to the SAM Port

Single 5.0-V Power Supply (±10%)

256 Selectable Serial Register Starting

Points

Dual-Port Accessibility – Simultaneous and

Asynchronous Access From the DRAM and

Serial-Address-Memory (SAM) Ports

Programmable Split-Register Stop Point

Write-per-Bit Function for Selective Write to

Each I/O of the DRAM Port

Up to 55-MHz Uninterrupted Serial-Data

Streams

Byte-Write Function for Selective Write to

Lower Byte (DQ0–DQ7) or Upper Byte

(DQ8–DQ15) of the DRAM Port

3-State Serial Outputs for Easy Multiplexing

of Video Data Streams

All Inputs/Outputs and Clocks TTL

Compatible

4-Column or 8-Column Block-Write

Function for Fast Area-Fill Operations

Compatible With JEDEC Standards

Enhanced Page Mode for Faster Access

With Extended-Data-Output (EDO) Option

for Faster System Cycle Time

Designed to Work With the Texas

Instruments (TI ) Graphics Family

Fabricated Using TI’s Enhanced

Performance Implanted CMOS (EPIC )

Process

CAS-Before-RAS (CBR) and Hidden

Refresh Functions

Long Refresh Period – Every 8 ms

(Maximum)

Full-Register-Transfer Function Transfers

Data from the DRAM to the Serial Register

performance ranges

ACCESS TIME

ROW ENABLE

ACCESS TIME

SERIAL DATA

DRAM PAGE

CYCLE TIME

DRAM EDO

CYCLE TIME

SERIAL

CYCLE TIME

OPERATING CURRENT

SERIAL PORT STANDBY

RAC

SCA

SCC

CC1

(MAX)

60 ns

70 ns

(MIN)

15 ns

20 ns

(MIN)

35 ns

40 ns

(MIN)

30 ns

(MIN)

18 ns

22 ns

(MAX)

180 mA

165 mA

–60 Speed

–70 Speed

Table 1. Device Option Table

DEVICE

POWER SUPPLY VOLTAGE

5.0 V ± 0.5 V

BLOCK-WRITE CAPABILITY

4-column

PAGE/EDO OPERATION

55160

55161

55170

55171

Page

EDO

Page

EDO

5.0 V ± 0.5 V

4-column

5.0 V ± 0.5 V

8-column

5.0 V ± 0.5 V

8-column

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

TI and EPIC are trademarks of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

12 3 4 5 6 7...67

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与TMS416169相关器件

型号	品牌	获取价格	描述	数据表
TMS416169-60DGE	TI	获取价格	1MX16 EDO DRAM, 60ns, PDSO44, 0.400 INCH, PLASTIC, TSOP-50/44
TMS416169-60DZ	TI	获取价格	1MX16 EDO DRAM, 60ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416169-70DZ	TI	获取价格	1MX16 EDO DRAM, 70ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416169-80DZ	TI	获取价格	1MX16 EDO DRAM, 80ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416169A-50DGE	TI	获取价格	1MX16 EDO DRAM, 50ns, PDSO44, PLASTIC, TSOP-50/44
TMS416169A-50DZ	TI	获取价格	1MX16 EDO DRAM, 50ns, PDSO42
TMS416169A-60DZ	TI	获取价格	1MX16 EDO DRAM, 60ns, PDSO42
TMS416169A-70DGE	TI	获取价格	1MX16 EDO DRAM, 70ns, PDSO44, PLASTIC, TSOP-50/44
TMS416169A-70DZ	TI	获取价格	1MX16 EDO DRAM, 70ns, PDSO42
TMS416169P-60	TI	获取价格	1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

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