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TMS416400-80DZ PDF预览

TMS416400-80DZ

更新时间： 2024-11-15 19:56:11
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
30页 438K
描述
4MX4 FAST PAGE DRAM, 80ns, PDSO24

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中文翻译

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TMS416400-80DZ 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：ObsoleteReach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.92Is Samacsys：N
访问模式：FAST PAGE最长访问时间：80 ns
其他特性：RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESHI/O 类型：COMMON
JESD-30 代码：R-PDSO-J24长度：18.415 mm
内存密度：16777216 bit内存集成电路类型：FAST PAGE DRAM
内存宽度：4功能数量：1
端口数量：1端子数量：24
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：4MX4
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：SOJ封装等效代码：SOJ24/28,.44
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
认证状态：Not Qualified刷新周期：4096
座面最大高度：3.76 mm自我刷新：NO
最大待机电流：0.001 A子类别：DRAMs
最大压摆率：0.07 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：J BEND
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：10.16 mm
Base Number Matches：1

TMS416400-80DZ 数据手册

 浏览型号TMS416400-80DZ的Datasheet PDF文件第2页浏览型号TMS416400-80DZ的Datasheet PDF文件第3页浏览型号TMS416400-80DZ的Datasheet PDF文件第4页浏览型号TMS416400-80DZ的Datasheet PDF文件第5页浏览型号TMS416400-80DZ的Datasheet PDF文件第6页浏览型号TMS416400-80DZ的Datasheet PDF文件第7页 
TMS416400, TMS416400P, TMS417400, TMS417400P  
TMS426400, TMS426400P, TMS427400, TMS427400P  
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS  
SMKS881B – MAY 1995 – REVISED AUGUST 1995  
DJ PACKAGE  
(TOP VIEW)  
DGA PACKAGE  
(TOP VIEW)  
Electrical characteristics for TMS416400/P and  
TMS417400/P is Production Data. Electrical  
characteristics  
TMS427400/P is Product Preview only.  
for  
TMS426400/P  
and  
V
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
V
V
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
V
SS  
CC  
SS  
CC  
DQ1  
DQ2  
W
DQ4 DQ1  
DQ3 DQ2  
CAS  
OE  
A9  
DQ4  
DQ3  
CAS  
OE  
Organization . . . 4194304 × 4  
Single 5 V Power Supply for TMS41x400/P  
(±10% Tolerance)  
W
RAS  
RAS  
†
†
A11  
A11  
A9  
Single 3.3 V Power Supply for  
TMS42x400/P (±0.3 V Tolerance)  
A10  
A0  
A1  
A2  
A3  
8
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A10  
A0  
A1  
A2  
A3  
8
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
Performance Ranges:  
9
9
ACCESS ACCESS ACCESS READ OR  
10  
11  
12  
13  
10  
11  
12  
13  
TIME  
TIME  
TIME  
WRITE  
CYCLE  
MIN  
t
t
t
RAC  
CAC  
AA  
MAX  
MAX  
MAX  
’4xx400/P-60  
’4xx400/P-70  
’4xx400/P-80  
60 ns  
70 ns  
80 ns  
15 ns  
18 ns  
20 ns  
30 ns  
35 ns  
40 ns  
110 ns  
130 ns  
150 ns  
V
V
V
V
SS  
CC  
SS  
CC  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR) Refresh  
Long Refresh Period and Self-Refresh  
Option (TMS4xx400P)  
PIN NOMENCLATURE  
†
A0–A11  
CAS  
Address Inputs  
3-State Unlatched Output  
Low Power Dissipation  
Column-Address Strobe  
Data In/Data Out  
DQ1–DQ4  
OE  
Output Enable  
High-Reliability Plastic 24/26-Lead  
300-Mil-Wide Surface-Mount Small-Outline  
J-Lead (SOJ) Package and 24/26-Lead  
Surface-Mount Thin Small-Outline Package  
(TSOP)  
NC  
No Internal Connection  
RAS  
Row-Address Strobe  
‡
V
V
5-V or 3.3-V Supply  
Ground  
CC  
SS  
W
Write Enable  
Operating Free-Air Temperature Range:  
†
‡
A11 is NC for TMS4x7400/P.  
See Available Options Table  
0°C to 70°C  
EPIC (Enhanced Performance Implanted  
CMOS) Technology  
description  
AVAILABLE OPTIONS  
SELF  
The TMS4xx400 is  
a set of high-speed,  
POWER  
SUPPLY  
REFRESH  
CYCLES  
REFRESH  
BATTERY  
BACKUP  
DEVICE  
16777216-bit dynamic random-access memories  
organized as 4194304 words of 4 bits each. The  
TMS4xx400P series are high-speed, low-power,  
self-refresh, 16777216-bit dynamic random-  
access memories organized as 4194304 words of  
4 bits each. The TMS4xx400 and TMS4xx400P  
employ state-of-the-art EPIC  
Performance Implanted CMOS) technology for  
high performance, reliability, and low power.  
TMS416400  
TMS416400P  
TMS417400  
TMS417400P  
TMS426400  
TMS426400P  
TMS427400  
TMS427400P  
5 V  
5 V  
5 V  
—
Yes  
—
4096 in 64 ms  
4096 in 128 ms  
2048 in 32 ms  
2048 in 128 ms  
4096 in 64 ms  
4096 in 128 ms  
2048 in 32 ms  
2048 in 128 ms  
5 V  
Yes  
—
Yes  
—
3.3 V  
3.3 V  
3.3 V  
3.3 V  
(Enhanced  
Yes  
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines  
are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1995, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...30

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与TMS416400-80DZ相关器件

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TMS416400A TI

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 		4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS416400A-50DGA TI

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 		4MX4 FAST PAGE DRAM, 50ns, PDSO24, PLASTIC, TSOP-26/24
TMS416400A-50DJ TI

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 		4MX4 FAST PAGE DRAM, 50ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS416400A-60DJ TI

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 		4MX4 FAST PAGE DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS416400A-70DGA TI

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 		4MX4 FAST PAGE DRAM, 70ns, PDSO24, PLASTIC, TSOP-26/24
TMS416400ADJ TI

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 		4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS416400DGA-60 TI

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 		4MX4 FAST PAGE DRAM, 60ns, PDSO24, PLASTIC, TSOP-26/24
TMS416400DGA-80 TI

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 		4MX4 FAST PAGE DRAM, 80ns, PDSO24, PLASTIC, TSOP-26/24
TMS416400DJ-60 TI

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 		4MX4 FAST PAGE DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS416400DJ-80 TI

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 		4MX4 FAST PAGE DRAM, 80ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

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