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TMS416409A

更新时间： 2024-11-14 22:49:39
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美国国家半导体 - NSC 存储
页数 文件大小 规格书
37页 518K
描述
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

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TMS416409A 数据手册

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TMS416409A, TMS417409A, TMS426409A, TMS427409A  
4194304 BY 4-BIT EXTENDED DATA OUT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMKS893B – AUGUST 1996 – REVISED APRIL 1997  
DJ/DGA PACKAGES  
This data sheet is applicable to all  
(TOP VIEW)  
TMS41x409As and TMS42x409As symbolized  
by Revision “B”, Revision “E”, and subsequent  
revisions as described in the device  
symbolization section.  
V
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
V
SS  
CC  
DQ1  
DQ2  
W
RAS  
A11  
DQ4  
DQ3  
CAS  
OE  
Organization . . . 4194304 × 4  
Single Power Supply (5 V or 3.3 V)  
Performance Ranges:  
†
A9  
ACCESS ACCESS ACCESS  
TIME TIME TIME  
EDO  
CYCLE  
A10  
A0  
A1  
A2  
A3  
8
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
t
t
t
t
RAC  
CAC  
AA  
HPC  
9
MAX  
50 ns  
60 ns  
70 ns  
50 ns  
60 ns  
70 ns  
MAX  
13 ns  
15 ns  
18 ns  
13 ns  
15 ns  
18 ns  
MAX  
25 ns  
30 ns  
35 ns  
25 ns  
30 ns  
35 ns  
MIN  
10  
11  
12  
13  
’41x409A-50  
’41x409A-60  
’41x409A-70  
’42x409A-50  
’42x409A-60  
’42x409A-70  
20 ns  
25 ns  
30 ns  
20 ns  
25 ns  
30 ns  
V
V
CC  
SS  
Extended-Data-Out (EDO) Operation  
CAS-Before-RAS (CBR) Refresh  
Low Power Dissipation  
PIN NOMENCLATURE  
†
A0–A11  
Address Inputs  
DQ1–DQ4  
CAS  
Data In/Data Out  
Column-Address Strobe  
No Internal Connection  
Output Enable  
3-State Unlatched Output  
NC  
OE  
High-Reliability Plastic 24/26-Lead  
300-Mil-Wide Surface-Mount Small-Outline  
J-Lead (SOJ) Package (DJ Suffix) and  
24/26-Lead 300-Mil-Wide Surface-Mount  
Thin Small-Outline Package (TSOP)  
(DGA Suffix)  
RAS  
Row-Address Strobe  
5-V or 3.3-V Supply  
Ground  
Write Enable  
‡
V
V
W
CC  
SS  
†
‡
A11 is NC for TMS417409A and TMS427409A.  
See Available Options Table  
Operating Free-Air Temperature Range  
0°C to 70°C  
AVAILABLE OPTIONS  
SELF  
description  
POWER  
SUPPLY  
REFRESH  
CYCLES  
REFRESH,  
BATTERY  
BACKUP  
DEVICE  
The TMS41x409A and TMS42x409A series are  
16777216-bit dynamic random-access memory  
(DRAM) devices organized as 4194304 words of  
four bits each.  
TMS416409A  
TMS417409A  
TMS426409A  
TMS427409A  
5 V  
5 V  
–
–
–
–
4096 in 64 ms  
2048 in 32 ms  
4096 in 64 ms  
2048 in 32 ms  
3.3 V  
3.3 V  
These devices feature maximum RAS access  
times of 50, 60, and 70 ns. All address and data-in  
lines are latched on chip to simplify system  
design. Data out is unlatched to allow greater  
system flexibility.  
The TMS416409A and TMS417409A are offered in a 24/26-lead plastic surface-mount SOJ package  
(DJ suffix). The TMS426409A and TMS427409A are offered in a 24/26-lead plastic surface-mount SOJ  
package (DJ suffix) and a 24/26-lead plastic surface-mount TSOP (DGA suffix). These packages are designed  
for operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...37

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TMS416409A-50DJ TI

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TMS416409A-60DGA TI

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 		4MX4 EDO DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24
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TMS4164-12JDL ROCHESTER

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TMS4164-15JDL ROCHESTER

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 		Fast Page DRAM
TMS4164-15NL ROCHESTER

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 		Page Mode DRAM, 64KX1, 150ns, NMOS, CDIP16, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-16
TMS4164-20FPL ROCHESTER

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 		Page Mode DRAM, 64KX1, 200ns, NMOS, PQCC18, PLASTIC, CC-18
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 		Fast Page DRAM

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