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TMS416800P-60DE PDF预览

TMS416800P-60DE

更新时间： 2024-11-15 15:54:51
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 353K
描述
2MX8 FAST PAGE DRAM, 60ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP-32

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TMS416800P-60DE 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：TSOP2,针数：32
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.84
访问模式：FAST PAGE最长访问时间：60 ns
其他特性：RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESHJESD-30 代码：R-PDSO-G32
长度：20.95 mm内存密度：16777216 bit
内存集成电路类型：FAST PAGE DRAM内存宽度：8
功能数量：1端口数量：1
端子数量：32字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：2MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP2封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE认证状态：Not Qualified
刷新周期：4096座面最大高度：1.2 mm
自我刷新：YES最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：10.16 mmBase Number Matches：1

TMS416800P-60DE 数据手册

 浏览型号TMS416800P-60DE的Datasheet PDF文件第2页浏览型号TMS416800P-60DE的Datasheet PDF文件第3页浏览型号TMS416800P-60DE的Datasheet PDF文件第4页浏览型号TMS416800P-60DE的Datasheet PDF文件第5页浏览型号TMS416800P-60DE的Datasheet PDF文件第6页浏览型号TMS416800P-60DE的Datasheet PDF文件第7页 
TMS416800, TMS417800  
2097152-WORD BY 8-BIT HIGH-SPEED DRAMS  
SMKS883A – OCTOBER 1995 – REVISED MARCH 1996  
Organization . . . 2097152 × 8  
DZ PACKAGE  
(TOP VIEW)  
Single 5 V Power Supply (±10% Tolerance)  
Performance Ranges:  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
V
SS  
CC  
ACCESS ACCESS ACCESS READ OR  
TIME  
2
DQ0  
DQ1  
DQ2  
DQ3  
W
DQ7  
DQ6  
DQ5  
DQ4  
CAS  
OE  
A9  
TIME  
TIME  
WRITE  
CYCLE  
MIN  
3
t
t
t
RAC  
CAC  
AA  
MAX  
MAX  
MAX  
4
’41x800-60  
’41x800-70  
’41x800-80  
60 ns  
70 ns  
80 ns  
15 ns  
18 ns  
20 ns  
30 ns  
35 ns  
40 ns  
110 ns  
130 ns  
150 ns  
5
6
7
RAS  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR) Refresh  
†
8
A11  
9
A10  
A0  
A1  
A2  
A3  
A8  
High-Impedance State Unlatched Output  
10  
11  
12  
13  
14  
A7  
High-Reliability Plastic 28-Lead  
400-Mil-Wide Surface-Mount Small-Outline  
J-Lead (SOJ) Package  
A6  
A5  
A4  
Operating Free-Air Temperature Range  
V
V
SS  
CC  
0°C to 70°C  
Fabricated Using Enhanced Performance  
Implanted CMOS (EPIC ) Technology by  
Texas Instruments (TI )  
PIN NOMENCLATURE  
†
A0–A11  
CAS  
Address Inputs  
Column-Address Strobe  
DQ0–DQ7  
OE  
Data In/Data Out  
Output Enable  
Row-Address Strobe  
5 V  
description  
RAS  
The TMS41x800 series is a set of high-speed,  
16777216-bit dynamic random-access memo-  
ries (DRAMs) organized as 2097152 words of  
eight bits each. It employs TI’s state-of-the-art  
EPIC technology for high performance, reliability,  
and low power.  
V
V
CC  
Ground  
SS  
W
Write Enable  
†
A11 is NC (no internal connection) for TMS417800.  
These devices feature maximum RAS access  
timesof60ns, 70ns, and80ns. Alladdressesand  
data-in lines are latched on-chip to simplify  
system design. Data out is unlatched to allow  
greater system flexibility.  
The TMS416800 and TMS417800 are offered in  
a 28-lead plastic surface-mount SOJ package  
(DZ suffix). This package is characterized for  
operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC and TI are trademarks of Texas Instruments Incorporated.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...25

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与TMS416800P-60DE相关器件

型号 品牌 获取价格 描述 数据表
TMS416800P-60DZ TI

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 		2MX8 FAST PAGE DRAM, 60ns, PDSO28
TMS416800P-70DE TI

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 		2MX8 FAST PAGE DRAM, 70ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP-32
TMS416800P-70DZ TI

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 		2MX8 FAST PAGE DRAM, 70ns, PDSO28
TMS416800P-80DE TI

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 		2MX8 FAST PAGE DRAM, 80ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP-32
TMS416800P-80DZ TI

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 		2MX8 FAST PAGE DRAM, 80ns, PDSO28
TMS416809 TI

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 		2097152-WORD BY 8-BIT HIGH-SPEED DRAMS
TMS416809-60DZ TI

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 		2MX8 EDO DRAM, 60ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
TMS416809-70DZ TI

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 		2MX8 EDO DRAM, 70ns, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
TMS417400 TI

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 		4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
TMS417400-60DJ TI

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 		4MX4 FAST PAGE DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

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