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TLP830F PDF预览

TLP830F

更新时间: 2024-02-01 08:31:06
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体光电晶体管光电晶体管
页数 文件大小 规格书
9页 258K
描述
Infrared LED + Phototransistor

TLP830F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Lifetime Buy包装说明:LEAD FREE, 11-11C1, 4 PIN
Reach Compliance Code:unknown风险等级:5.23
Coll-Emtr Bkdn Voltage-Min:35 V配置:SINGLE
最大暗电源:100 nA最大正向电流:0.025 A
间隙大小:2 mm安装特点:THROUGH HOLE MOUNT
功能数量:1最大通态电流:0.05 A
最大通态电压:35 V标称通态集电极电流:50 mA
最高工作温度:75 °C最低工作温度:-10 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
最长响应时间:0.0008 s标称槽宽:2 mm
表面贴装:NOBase Number Matches:1

TLP830F 数据手册

 浏览型号TLP830F的Datasheet PDF文件第2页浏览型号TLP830F的Datasheet PDF文件第3页浏览型号TLP830F的Datasheet PDF文件第4页浏览型号TLP830F的Datasheet PDF文件第5页浏览型号TLP830F的Datasheet PDF文件第6页浏览型号TLP830F的Datasheet PDF文件第7页 
TLP830(F)  
TOSHIBA Photointerrupter Infrared LED + Phototransistor  
TLP830(F)  
Lead(Pb)-Free  
Track "00" Sensor For Floppy Disk Drive  
Detection Of SubScanning Quantity By  
Image Scanner  
Various Position Detection Sensor  
TLP830(F) is a photointerrupter which uses a  
highradiant power GaAs LED and a fastresponse  
Si phototransistor. The device is high resolution  
with a narrow slit pitch.  
Small package: 7.4mm (H), 4.5mm (D)  
Printed wiring board direct mounting type  
(with a locating pin).  
Board thickness: 1mm or less  
Short lead type enabling automated mounting  
Gap: 2mm  
High resolution: Slit width 0.15mm  
High current transfer ratio: I /I = 3% (min)  
C F  
Material of the package  
: Polybutylene terephthalate  
(UL94V0, black color)  
TOSHIBA  
1111C1  
Weight: 0.4 g (typ.)  
Detector side is of visible light cut type.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
mA  
Forward current  
I
50  
0.33  
−2  
F
Ta > 25°C  
Ta > 85°C  
Forward current  
derating  
ΔI / °C  
F
mA / °C  
LED  
Reverse voltage  
V
5
V
V
R
Collectoremitter voltage  
Emittercollector voltage  
Collector power dissipation  
V
V
35  
CEO  
ECO  
5
V
P
75  
mW  
C
Detector  
Collector power dissipation  
derating (Ta > 25°C)  
ΔP / °C  
1  
mW / °C  
C
Collector current  
I
50  
mA  
°C  
°C  
°C  
C
Operating temperature range  
Storage temperature range  
Soldering temperature (5 s)  
T
opr  
30~85  
40~100  
260  
T
stg  
sol  
T
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-10-01  

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