Datasheet > TLP331_07

TLP331_07

更新时间： 2024-09-19 03:59:23

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体光电二极管晶体管光电晶体管
页数	文件大小	规格书
8页	193K
描述
GaAs Ired & Photo−Transistor

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中文翻译

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数据手册

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TLP331_07 数据手册

TLP331,TLP332

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP331,TLP332

Office Machine

Unit in mm

Household Use Equipment

Programmable Controllers

AC / DC−Input Module

Telecommunication

The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide

infrared emitting diode optically coupled to a photo−transistor in a six

lead plastic DIP package.

This photocoupler provides the unique feature of high current transfer

ratio at both low output voltage and low input current. This makes it

ideal for use in low power logic circuits, telecommunications equipment

and portable electronics isolation applications.

TLP332 is no−base internal connection for high−EMI environments.

•

Collector−emitter voltage: 55V (min.)

Isolation voltage: 5000Vrms (min.)

UL recognized: UL1577, file no. E67349

Current transfer ratio

TOSHIBA

11−7A8

Weight: 0.4 g

Current Transfer Ratio (min.)

Marking

Classi−

Fication

Classi−

fication

Ta = 25°C

= 1mA = 0.5mA

Ta = −25~75°C

I = 1mA

Pin Configurations (top view)

(*)

= 0.5V

= 1.5V

= 0.5V

TLP331

TLP332

Rank BV

Standard

200%

100%

50%

100%

50%

BV, blank

(*) Ex. Standard: TLP331

Rank BV: TLP331(BV)

(Note) Application type name for certification test,

please use standard product type name, i.e.

TLP331(BV): TLP331

1: ANODE

2: CATHODE

3: NC

1: ANODE

2: CATHODE

3: NC

4: EMITTER

5: COLLECTOR

6: BASE

4: EMITTER

5: COLLECTOR

6: NC

2007-10-01

12 3 4 5 6 7 8

中文翻译

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