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TLP291(BLL-TRSE(T PDF预览

TLP291(BLL-TRSE(T

更新时间: 2024-11-25 20:05:59
品牌 Logo 应用领域
东芝 - TOSHIBA 输出元件光电
页数 文件大小 规格书
13页 330K
描述
Transistor Output Optocoupler

TLP291(BLL-TRSE(T 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.6光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches:1

TLP291(BLL-TRSE(T 数据手册

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TLP291  
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR  
TLP291  
Power Supplies  
Unit: mm  
Programmable Controllers  
Hybrid ICs  
TLP291 consists of photo transistor, optically coupled to a gallium arsenide  
infrared emitting diode. TLP291 is housed in the SO4 package, very small  
and thin coupler.  
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)  
and high isolation voltage (3750Vrms), it’s suitable for high-density surface  
mounting applications such as small switching power supplies and  
programmable controllers.  
Collector-Emitter Voltage : 80 V (min)  
Current Transfer Ratio  
: 50% (min)  
Rank GB  
: 100% (min)  
TOSHIBA  
11-3C1  
Isolation Voltage  
Operation temperature  
UL recognized  
: 3750 Vrms (min)  
Weight: 0.05 g (typ.)  
: -55 to 110 ˚C  
: UL1577, File No. E67349  
: CSA Component Acceptance Service No.5A,  
File No. 67349  
cUL approved  
Pin Configuration  
SEMKO approved:  
EN 60065: 2002, Approved no. 1200315  
EN 60950-1: 2001, EN 60335-1: 2002,  
Approved no. 1200315  
TLP291  
1
2
4
3
BSI approved  
Option (V4)  
: BS EN 60065: 2002, Approved no. 9036  
: BS EN 60950-1: 2006, Approved no. 9037  
VDE approved: EN 60747-5-5 Certificate, No. 40009347  
Maximum operating insulation voltage: 707 Vpk  
Highest permissible over-voltage: 6000 Vpk  
(Note) When EN 60747-5-5 approved type is needed,  
please designate the “Option(V4)”  
1:ANODE  
2:CATHODE  
3:EMITTER  
4:COLLECTOR  
Construction Mechanical Rating  
Creepage distance:  
Clearance:  
5.0 mm (min)  
5.0 mm (min)  
0.4 mm (min)  
Insulation thickness:  
Start of commercial production  
2012/02  
1
2014-09-22  

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