Datasheet > TLP291(BL-TP,SE

TLP291(BL-TP,SE

更新时间： 2024-11-21 18:15:47

品牌	Logo	应用领域
东芝 - TOSHIBA		输出元件光电
页数	文件大小	规格书
10页	324K
描述
OPTOISOLATOR 3.75KV TRANS 4-SO

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中文翻译

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技术参数
数据手册

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TLP291(BL-TP,SE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	1.77
Samacsys Description：	Transistor Output Optocouplers X36 PBF Transistor Couplr ACInput 110C	光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches：	1

TLP291(BL-TP,SE 数据手册

TLP291(SE

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291(SE

Power Supplies

Unit: mm

Programmable Controllers

Hybrid ICs

TLP291(SE consists of photo transistor optically coupled to a gallium

arsenide infrared emitting diode.

TLP291(SE is housed in the SO4 package, very small and thin coupler.

Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to

110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density

surface mounting applications such as small switching power supplies and

programmable controllers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio

: 50% (min)

TOSHIBA

11-3C1

Rank GB

: 100% (min)

Weight: 0.05 g (typ.)

 Isolation Voltage

: 3750 Vrms (min)

 Operation temperature: -55 to 110 ˚C

Pin Configuration

 UL recognized

 cUL approved

: UL1577, File No. E67349

: CSA Component Acceptance Service No.5A,

File No. E67349

 SEMKO conformity

 BSI conformity

: EN 60065: 2002,

TLP291

EN 60950-1: 2001, EN 60335-1: 2002,

: BS EN 60065: 2002,

BS EN 60950-1: 2006

 VDE conformity: EN 60747-5-5

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

Construction Mechanical Rating

Creepage distance: 5.0mm(min)

Clearance: 5.0mm(min)

Insulation thickness: 0.4mm(min)

2013-05-27

12 3 4 5 6 7...10

中文翻译

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