Datasheet > TLP291(TP,SE)

TLP291(TP,SE)

更新时间： 2024-11-26 06:18:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
13页	330K
描述
Transistor Output Optocoupler

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数据手册

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TLP291(TP,SE) 数据手册

TLP291

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291

Power Supplies

Unit: mm

Programmable Controllers

Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide

infrared emitting diode. TLP291 is housed in the SO4 package, very small

and thin coupler.

Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)

and high isolation voltage (3750Vrms), it’s suitable for high-density surface

mounting applications such as small switching power supplies and

programmable controllers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio

: 50% (min)

Rank GB

: 100% (min)

TOSHIBA

11-3C1

 Isolation Voltage

 Operation temperature

 UL recognized

: 3750 Vrms (min)

Weight: 0.05 g (typ.)

: -55 to 110 ˚C

: UL1577, File No. E67349

: CSA Component Acceptance Service No.5A,

File No. 67349

 cUL approved

Pin Configuration

 SEMKO approved:

EN 60065: 2002, Approved no. 1200315

EN 60950-1: 2001, EN 60335-1: 2002,

Approved no. 1200315

TLP291

 BSI approved

 Option (V4)

: BS EN 60065: 2002, Approved no. 9036

: BS EN 60950-1: 2006, Approved no. 9037

VDE approved: EN 60747-5-5 Certificate, No. 40009347

Maximum operating insulation voltage: 707 Vpk

Highest permissible over-voltage: 6000 Vpk

(Note) When EN 60747-5-5 approved type is needed,

please designate the “Option(V4)”

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

Construction Mechanical Rating

Creepage distance:

Clearance:

5.0 mm (min)

0.4 mm (min)

Insulation thickness:

Start of commercial production

2012/02

2014-09-22

12 3 4 5 6 7...13

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