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TL082IDRQ1 PDF预览

TL082IDRQ1

更新时间: 2024-11-04 12:50:35
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输入元件
页数 文件大小 规格书
15页 345K
描述
JFET-INPUT OPERATIONAL AMPLIFIER

TL082IDRQ1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.69放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.0002 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:75 dB
标称共模抑制比:86 dB频率补偿:YES
最大输入失调电流 (IIO):0.02 µA最大输入失调电压:6000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:NO
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:+-15 V
可编程功率:NO认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:13 V/us
子类别:Operational Amplifier最大压摆率:2.8 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:3000 kHz最小电压增益:50000
宽带:NO宽度:3.91 mm
Base Number Matches:1

TL082IDRQ1 数据手册

 浏览型号TL082IDRQ1的Datasheet PDF文件第2页浏览型号TL082IDRQ1的Datasheet PDF文件第3页浏览型号TL082IDRQ1的Datasheet PDF文件第4页浏览型号TL082IDRQ1的Datasheet PDF文件第5页浏览型号TL082IDRQ1的Datasheet PDF文件第6页浏览型号TL082IDRQ1的Datasheet PDF文件第7页 
TL082-Q1  
JFET-INPUT OPERATIONAL AMPLIFIER  
www.ti.com  
SLOS548SEPTEMBER 2007  
1
FEATURES  
D PACKAGE  
(TOP VIEW)  
Qualified for Automotive Applications  
Low Power Consumption  
1OUT  
1IN–  
1IN+  
V
CC+  
1
2
3
4
8
7
6
5
Wide Common-Mode and Differential  
Voltage Ranges  
2OUT  
2IN–  
2IN+  
Low Input Bias and Offset Currents  
Low Total Harmonic Distortion: 0.003% Typ  
High Input Impedance: JFET-Input Stage  
Latchup-Free Operation  
V
CC–  
High Slew Rate: 13 V/μs Typ  
Common-Mode Input Voltage Range  
Includes VCC+  
DESCRIPTION/ORDERING INFORMATION  
The TL082 JFET-input operational amplifier incorporates well-matched, high-voltage JFET and bipolar transistors  
in a monolithic integrated circuit. The device features high slew rates, low input bias and offset currents, and low  
offset-voltage temperature coefficient.  
The I-suffix device is characterized for operation from –40°C to 85°C. The Q-suffix device is characterized for  
operation from –40°C to 125°C.  
ORDERING INFORMATION(1)  
TJ  
PACKAGE(2)  
Reel of 2500  
Reel of 2500  
ORDERABLE PART NUMBER  
TL082IDRQ1  
TOP-SIDE MARKING  
TL082I  
–40°C to 85°C  
–40°C to 125°C  
SOIC – D  
SOIC – D  
TL082QDRQ1  
TL082Q  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

TL082IDRQ1 替代型号

型号 品牌 替代类型 描述 数据表
TL082CM/NOPB TI

类似代替

Wide Bandwidth Dual JFET Input Operational Amplifier
LF353MX/NOPB TI

类似代替

2-Channel wide bandwidth JFET input operational amplifier 8-SOIC 0 to 70
LF353M/NOPB TI

类似代替

2-Channel wide bandwidth JFET input operational amplifier 8-SOIC 0 to 70

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