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TL082MJG883B PDF预览

TL082MJG883B

更新时间: 2024-11-20 14:14:15
品牌 Logo 应用领域
德州仪器 - TI 放大器
页数 文件大小 规格书
45页 1624K
描述
DUAL OP-AMP, 0uV OFFSET-MAX, 3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8

TL082MJG883B 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIP包装说明:CERAMIC, DIP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.64Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
25C 时的最大偏置电流 (IIB):0.0002 µA标称共模抑制比:86 dB
频率补偿:YES最大输入失调电压:
JESD-30 代码:R-GDIP-T8JESD-609代码:e0
长度:9.58 mm低-偏置:YES
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
电源:+-15 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class B座面最大高度:5.08 mm
标称压摆率:0.06 V/us子类别:Operational Amplifier
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL标称均一增益带宽:3000 kHz
宽度:7.62 mmBase Number Matches:1

TL082MJG883B 数据手册

 浏览型号TL082MJG883B的Datasheet PDF文件第2页浏览型号TL082MJG883B的Datasheet PDF文件第3页浏览型号TL082MJG883B的Datasheet PDF文件第4页浏览型号TL082MJG883B的Datasheet PDF文件第5页浏览型号TL082MJG883B的Datasheet PDF文件第6页浏览型号TL082MJG883B的Datasheet PDF文件第7页 
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ꢀ ꢁꢂ ꢃ ꢉ ꢅ ꢀ ꢁꢂ ꢃ ꢉ ꢆ ꢅ ꢀꢁ ꢂꢃ ꢉꢇ  
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SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004  
D
D
D
D
D
Low Power Consumption  
D
D
D
D
High Input Impedance . . . JFET-Input Stage  
Latch-Up-Free Operation  
Wide Common-Mode and Differential  
Voltage Ranges  
High Slew Rate . . . 13 V/µs Typ  
Common-Mode Input Voltage Range  
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
Includes V  
CC+  
Low Total Harmonic  
Distortion . . . 0.003% Typ  
description/ordering information  
The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previously  
developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates  
well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature  
high slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. Offset  
adjustment and external compensation options are available within the TL08x family.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from 40°C to 85°C. The Q-suffix devices are characterized for operation from 40°C to 125°C.  
The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.  
ORDERING INFORMATION  
V
max  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
IO  
PACKAGE  
T
J
AT 255C  
Tube of 50  
TL081CP  
TL081CP  
PDIP (P)  
PDIP (N)  
Tube of 50  
TL082CP  
TL082CP  
TL084CN  
Tube of 25  
TL084CN  
Tube of 75  
TL081CD  
TL081C  
TL082C  
TL084C  
Reel of 2500  
Tube of 75  
TL081CDR  
TL082CD  
SOIC (D)  
Reel of 2500  
Tube of 50  
TL082CDR  
TL084CD  
0°C to 70°C  
15 mV  
Reel of 2500  
Reel of 2000  
Reel of 2000  
Reel of 2000  
Tube of 150  
Reel of 2000  
Tube of 90  
TL084CDR  
TL081CPSR  
TL082CPSR  
TL084CNSR  
TL082CPW  
TL082CPWR  
TL084CPW  
TL084CPWR  
T081  
T082  
TL084  
SOP (PS)  
SOP (NS)  
T082  
T084  
TSSOP (PW)  
Reel of 2000  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2004, Texas Instruments Incorporated  
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ꢟꢬ  
ꢠꢘ  
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ꢛꢡ  
ꢙꢭ  
ꢛꢣ  
ꢙꢡ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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