是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | CERAMIC, DIP-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.64 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
25C 时的最大偏置电流 (IIB): | 0.0002 µA | 标称共模抑制比: | 86 dB |
频率补偿: | YES | 最大输入失调电压: | |
JESD-30 代码: | R-GDIP-T8 | JESD-609代码: | e0 |
长度: | 9.58 mm | 低-偏置: | YES |
低-失调: | NO | 负供电电压上限: | -18 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | +-15 V | 认证状态: | Not Qualified |
筛选级别: | MIL-STD-883 Class B | 座面最大高度: | 5.08 mm |
标称压摆率: | 0.06 V/us | 子类别: | Operational Amplifier |
供电电压上限: | 18 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 标称均一增益带宽: | 3000 kHz |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TL082MJGB | TI |
获取价格 |
JFET-INPUT OPERATIONAL AMPLIFIERS | |
TL082MN | STMICROELECTRONICS |
获取价格 |
GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIERS | |
TL082MP | STMICROELECTRONICS |
获取价格 |
GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIERS | |
TL082MPT | STMICROELECTRONICS |
获取价格 |
GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIERS | |
TL082MU | TI |
获取价格 |
JFET-INPUT OPERATIONAL AMPLIFIERS | |
TL082MWC | TI |
获取价格 |
暂无描述 | |
TL082-N | TI |
获取价格 |
TL082 Wide Bandwidth Dual JFET Input Operational Amplifier | |
TL082-N_13 | TI |
获取价格 |
Wide Bandwidth Dual JFET Input Operational Amplifier | |
TL082-P08-R | UTC |
获取价格 |
GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER | |
TL082-Q1 | TI |
获取价格 |
JFET-INPUT OPERATIONAL AMPLIFIER |