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TK8P25DA PDF预览

TK8P25DA

更新时间: 2024-11-16 12:24:23
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飞思卡尔 - FREESCALE /
页数 文件大小 规格书
8页 335K
描述
MOSFETs Silicon N-Channel MOS (π-MOS)

TK8P25DA 数据手册

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TK8P25DA  
MOSFETs Silicon N-Channel MOS (π-MOS)  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.41 (typ.)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)  
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate (G)  
2: Drain (D)  
3: Source (S)  
DPAK  
4. Absolute Maximum Ratings (Note) (T = 25unless otherwise specified)  
a
Characteristics  
Symbol  
VDSS  
Rating  
250  
Unit  
V
Drain-source voltage  
Gate-source voltage  
VGSS  
±20  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
(Note 1)  
(Note 1)  
ID  
IDP  
PD  
7.5  
30  
A
(Tc = 25)  
55  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
(Note 3)  
(Note 1)  
(Note 1)  
EAS  
IAR  
IDR  
IDRP  
Tch  
45  
7.5  
7.5  
30  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1/8  
www.freescale.net.cn  

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