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TK8P65W PDF预览

TK8P65W

更新时间: 2024-11-06 14:56:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 263K
描述
N-ch MOSFET, 650 V, 0.67 Ω@10V, DPAK, DTMOSⅣ

TK8P65W 数据手册

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TK8P65W  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK8P65W  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.)  
by used to Super Junction Structure : DTMOS  
(2) Easy to control Gate switching  
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (Heatsink)  
3: Source  
DPAK  
Start of commercial production  
2014-05  
2014-09-17  
Rev.3.0  
1

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