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TK8R2E06PL PDF预览

TK8R2E06PL

更新时间: 2024-11-19 14:57:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 575K
描述
N-ch MOSFET, 60 V, 0.0082 Ω@10V, TO-220, U-MOSⅨ-H

TK8R2E06PL 数据手册

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TK8R2E06PL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK8R2E06PL  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 9.7 nC (typ.)  
(3) Small output charge: Qoss = 23 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 6.1 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)  
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
TO-220  
Start of commercial production  
2016-10  
©2016-2021  
2021-02-02  
Rev.3.0  
1
Toshiba Electronic Devices & Storage Corporation  

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