Datasheet > TK8R2A06PL

TK8R2A06PL

更新时间： 2024-09-26 14:57:55

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TK8R2A06PL 数据手册

TK8R2A06PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK8R2A06PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 10 nC (typ.)

(3) Small output charge: Qoss = 23 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

Start of commercial production

2016-10

2021-01-27

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK8R2E06PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0082 Ω@10V, TO-220, U-MO
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