Datasheet > TK70D06J1

TK70D06J1

更新时间： 2024-11-09 03:27:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	222K
描述
Switching Regulator Application

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中文翻译

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技术参数
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TK70D06J1 技术参数

生命周期：	Transferred	包装说明：	ROHS COMPLIANT, 2-10V1A, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.35	雪崩能效等级（Eas）：	751 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	70 A
最大漏源导通电阻：	7.6 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	280 A	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TK70D06J1 数据手册

TK70D06J1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)

TK70D06J1

Switching Regulator Application

Unit: mm

•

High-Speed switching

Small gate charge: Q_g= 87nC (typ.)

Low drain-source ON resistance: R

= 5.1 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 80S

Low leakage current: I

= 10 μA (max) (V

= 60 V)

DSS

Enhancement-mode: V = 1.1~2.3 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (Note 1)

280

140

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

Single pulse avalanche energy

751

(Note 2)

TOSHIBA

2-10V1A

Avalanche current

10.3

Weight: 1.35 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Thermal Characteristics

Internal Connection

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.89

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel & lead temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C, L = 200 μH, I = 70 A, R = 1 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Handle with care.

2007-02-05

12 3 4 5 6

中文翻译

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与TK70D06J1相关器件

型号	品牌	获取价格	描述	数据表
TK70D06J1_09	TOSHIBA	获取价格	Switching Regulator Application
TK70D1A3B2T2	GREATECS	获取价格	High Capacity Toggle Switches up to 20A
TK70D3A3B2T2	GREATECS	获取价格	High Capacity Toggle Switches up to 20A
TK70J04J3	TOSHIBA	获取价格	EOL announced
TK70J04J3(F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,70A I(D),TO-247VAR
TK70J04J3(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,70A I(D),TO-247VAR
TK70J04K3Z	TOSHIBA	获取价格	Switching Voltage Regulators DC-DC Converters Motor Drivers
TK70J06K3	TOSHIBA	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
TK70J06K3(F)	TOSHIBA	获取价格	TK70J06K3(F)
TK70J06K3(Q)	TOSHIBA	获取价格	TK70J06K3(Q)

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