Datasheet > TK70X04K3(TE24L)

TK70X04K3(TE24L)

更新时间： 2024-09-24 20:10:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	222K
描述
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,70A I(D),SMT

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技术参数
数据手册

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TK70X04K3(TE24L) 技术参数

是否Rohs认证：	不符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	70 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	80 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

TK70X04K3(TE24L) 数据手册

TK70X04K3

MOSFETs Silicon N-channel MOS (U-MOS )

TK70X04K3

1. Applications

•

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate :G

2: N.C.

3: Source :S

4: Drain :D

TFP

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

IDP

210

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

Channel temperature

Storage temperature

(Note 3)

Tch

Tstg

175



-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-09-02

Rev.1.0

12 3 4 5 6 7...9

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