Datasheet > TK4P60D,RQ

TK4P60D,RQ

更新时间： 2024-09-29 19:45:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	234K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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TK4P60D,RQ 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	5.68	Base Number Matches：	1

TK4P60D,RQ 数据手册

TK4P60D

MOSFETs Silicon N-Channel MOS (π-MOS)

TK4P60D

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.)

(2) High forward transfer admittance: |Yfs| = 2.5 S (typ.)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V)

(4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate (G)

2: Drain (D)(Heatsink)

3: Source (S)

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

VDSS

Rating

600

Unit

Drain-source voltage

Gate-source voltage

VGSS

±30

Drain current (DC)

Drain current (pulsed)

Power dissipation

(Note 1)

IDP

100

158

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

(Note 3)

(Note 1)

EAS

IAR

IDR

IDRP

Tch

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2012-01

2014-01-06

Rev.2.0

12 3 4 5 6 7...9

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