Datasheet > TK20J60U(F)

TK20J60U(F)

更新时间： 2024-11-11 21:15:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	274K
描述
MOSFET N-CH 600V 20A TO-3PN

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中文翻译

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技术参数
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TK20J60U(F) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
Factory Lead Time：	24 weeks	风险等级：	2.2
配置：	Single	最大漏极电流 (Abs) (ID)：	20 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	190 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

TK20J60U(F) 数据手册

TK20J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)

TK20J60U

Switching Regulator Applications

Unit: mm

15.9 MAX.

Ф3.2 ± 0.2

•

Low drain-source ON-resistance: R

High forward transfer admittance: ⎪Y ⎪ = 12 S (typ.)

= 0.165 Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (max) (V

= 600 V)

DSS

Enhancement mode: V = 3.0 to 5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

2.0 ± 0.3

＋0.3

1.0

Characteristics

Drain-source voltage

Symbol

Rating

Unit

－0.25

600

±30

DSS

5.45 ± 0.2

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

190

1. Gate

2. Drain (heatsink)

3. Source

Single pulse avalanche energy

144

(Note 2)

JEDEC

⎯

Avalanche current

JEITA

SC-65

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Storage temperature range

stg

−55 to 150

Weight : 4.6 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.658

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 1.12 mH, R = 25 Ω, I

= 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2008-06

2013-11-01

12 3 4 5 6

中文翻译

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与TK20J60U(F)相关器件

型号	品牌	获取价格	描述	数据表
TK20J60U(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,20A I(D),TO-247VAR
TK20J60W	NXP	获取价格	MOSFETs Silicon N-Channel MOS (DTMOSIV)
TK20J60W	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-3P(N), DT
TK20J60W(F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,20A I(D),TO-247VAR
TK20J60W(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,20A I(D),TO-247VAR
TK20J60W,S1VE	TOSHIBA	获取价格	Power Field-Effect Transistor
TK20J60W5	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-3P(N), DT
TK20N60W	TOSHIBA	获取价格	MOSFETs Silicon N-Channel MOS (DTMOS)
TK20N60W5	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-247, DTMO
TK20P04M1	TOSHIBA	获取价格	DC-DC Converters Switching Voltage Regulators

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