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TK20J60W5 PDF预览

TK20J60W5

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 239K
描述
N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-3P(N), DTMOSⅣ

TK20J60W5 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.24
雪崩能效等级(Eas):200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.175 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TK20J60W5 数据手册

 浏览型号TK20J60W5的Datasheet PDF文件第2页浏览型号TK20J60W5的Datasheet PDF文件第3页浏览型号TK20J60W5的Datasheet PDF文件第4页浏览型号TK20J60W5的Datasheet PDF文件第5页浏览型号TK20J60W5的Datasheet PDF文件第6页浏览型号TK20J60W5的Datasheet PDF文件第7页 
TK20J60W5  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK20J60W5  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Fast reverse recovery time: trr = 110 ns (typ.)  
(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.)  
by used to Super Junction Structure : DTMOS  
(3) Easy to control Gate switching  
(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (Heatsink)  
3: Source  
TO-3P(N)  
Start of commercial production  
2013-10  
2014-02-25  
Rev.3.0  
1

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