Datasheet > TK20E60W

TK20E60W

更新时间： 2024-11-12 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	249K
描述
N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-220, DTMOSⅣ

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替代型号

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TK20E60W 数据手册

TK20E60W

MOSFETs Silicon N-Channel MOS (DTMOS)

TK20E60W

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

600

±30

(Note 1)

IDP

(Tc = 25)

165

200

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

IDR

IDRP

Tch

150

-55 to 150

0.6



Storage temperature

Tstg

TOR

Mounting torque

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2012-11

2013-12-26

Rev.4.0

12 3 4 5 6 7...10

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TK20E60W 替代型号

型号	品牌	替代类型	描述	数据表
STW26NM60N	STMICROELECTRONICS	功能相似	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-2
STW25NM60ND	STMICROELECTRONICS	功能相似	N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Po
STW45NM50	STMICROELECTRONICS	功能相似	N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET

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