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TISP4082F3SL PDF预览

TISP4082F3SL

更新时间: 2024-09-15 15:54:23
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
11页 339K
描述
82V, 6A, SILICON SURGE PROTECTOR, SIP-2

TISP4082F3SL 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SIP包装说明:IN-LINE, R-PSIP-T2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
其他特性:UL RECOGNIZED最大转折电压:82 V
配置:SINGLE最大断态直流电压:66 V
最大维持电流:150 mAJESD-30 代码:R-PSIP-T2
通态非重复峰值电流:6 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
子类别:Silicon Surge Protectors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TISP4082F3SL 数据手册

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TISP4072F3, TISP4082F3  
SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
R
R
R
R
T
T
T
T
V
V
(BO)  
DRM  
DEVICE  
V
V
‘4072F3  
‘4082F3  
58  
66  
72  
82  
MDXXAI  
Specified ratings require the connection  
of pins 1, 2, 3 and 4 for the T terminal.  
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
SL PACKAGE  
(TOP VIEW)  
Rated for International Surge Wave Shapes  
1
T
I
TSP  
WAVE SHAPE  
STANDARD  
A
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
80  
70  
60  
45  
38  
50  
50  
50  
35  
R
2
MDXXAH  
10/160 µs  
10/560 µs  
0.5/700 µs  
MD4XAA  
device symbol  
FTZ R12  
10/700 µs  
VDE 0433  
D PACKAGE  
SL PACKAGE  
CCITT IX K17/K20  
REA PE-60  
T
T
T
T
T
10/1000 µs  
2
1
4
5
3
1
8
Surface Mount and Through-Hole Options  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
D
DR  
SL  
6
7
2
R
R
R
R
R
Single-in-line  
SD4XAL  
Terminals T and R correspond to the  
alternative line designators of A and B  
UL Recognized, E132482  
description  
These low voltage symmetrical transient voltage  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation  
suppressor devices are designed to protect two  
wire telecommunication applications against  
transients caused by lightning strikes and ac  
power lines. Offered in two voltage variants to  
meet battery and protection requirements they  
are guaranteed to suppress and withstand the  
listed international lightning surges in both  
polarities.  
The small-outline 8-pin assignment has been  
carefully chosen for the TISP series to maximise  
the inter-pin clearance and creepage distances  
which are used by standards (e.g. IEC950) to  
establish voltage withstand ratings.  
Transients are initially clipped by breakdown  
clamping until the voltage rises to the breakover  
level, which causes the device to crowbar. The  
high crowbar holding current prevents dc latchup  
as the current subsides.  
Copyright © 1997 Texas Instruments Incorporated  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under  
private label for Texas Instruments.  
1

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