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TISP4080M3BJR-STISP4080M3BJR-S PDF预览

TISP4080M3BJR-STISP4080M3BJR-S

更新时间: 2024-10-30 14:36:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
12页 644K
描述
Silicon Surge Protector, 80V V(BO) Max, 32A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

TISP4080M3BJR-STISP4080M3BJR-S 技术参数

生命周期:Active零件包装代码:DO-214AA
包装说明:SMALL OUTLINE, R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.62
Is Samacsys:N其他特性:UL RECOGNIZED
最大转折电压:80 V配置:SINGLE
最大断态直流电压:65 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2通态非重复峰值电流:32 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE表面贴装:YES
端子形式:C BEND端子位置:DUAL
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

TISP4080M3BJR-STISP4080M3BJR-S 数据手册

 浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第2页浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第3页浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第4页浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第5页浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第6页浏览型号TISP4080M3BJR-STISP4080M3BJR-S的Datasheet PDF文件第7页 
T
TISP4070M3BJ THRU TISP4115M3BJ,  
TISP4125M3BJ THRU TISP4220M3BJ,  
TISP4240M3BJ THRU TISP4400M3BJ  
N
A
I
L
P
M
O
C
S
H
o
R
*
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP4xxxM3BJ Overvoltage Protector Series  
ITU-T K.20/21/44/45 rating ................ 4 kV 10/700, 100 A 5/310  
SMBJ Package (Top View)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
T(A)  
2
R(B) 1  
V
V
DRM  
(BO)  
Device  
V
V
MDXXBGE  
‘4070  
‘4080  
‘4095  
‘4115  
‘4125  
‘4145  
‘4165  
‘4180  
‘4200  
‘4220  
‘4240  
‘4250  
‘4265  
‘4290  
‘4300  
‘4350  
‘4360  
‘4395  
‘4400  
58  
65  
75  
90  
70  
80  
95  
Device Symbol  
T
115  
125  
145  
165  
180  
200  
220  
240  
250  
265  
290  
300  
350  
360  
395  
400  
100  
120  
135  
145  
155  
160  
180  
190  
200  
220  
230  
275  
290  
320  
300  
SD4XAA  
R
T
erminals T and R correspond to the  
alternative line designators of A and B  
I
TSP  
A
Wave Shape  
Standard  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
300  
220  
120  
100  
75  
10/160 µs  
10/700 µs  
10/560 µs  
10/1000 µs  
Low Differential Capacitance ................................. 39 pF max.  
ITU-T K.20/21/45  
FCC Part 68  
®
............................................ UL Recognized Component  
GR-1089-CORE  
50  
Description  
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning  
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used  
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of  
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the  
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as  
the diverted current subsides.  
How To Order  
Order As  
Embossed Tape Reeled TISP4xxxM3BJR-S  
Device  
Package  
Carrier  
TISP4xxxM3BJ BJ (J-Bend DO-214AA/SMB)  
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
NOVEMBER 1997 - REVISED MAY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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