Datasheet > TIS73J05Z

TIS73J05Z

更新时间： 2024-11-25 14:45:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
8页	543K
描述
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92, 3 PIN

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技术参数
数据手册

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TIS73J05Z 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.64
配置：	SINGLE	最小漏源击穿电压：	30 V
最大漏源导通电阻：	25 Ω	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	8 pF	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TIS73J05Z 数据手册

TIS73

TIS74

TO-92

NOTE: Source & Drain

are interchangeable

N-Channel General Purpose Amplifier

This device is designed for low level analog switching, sample

and hold circuits and chopper stabilized amplifiers. Sourced from

Process 54.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

- 30

V_GS

I_GF

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

TIS73 / TIS74

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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