Datasheet > TIS75-D26Z

TIS75-D26Z

更新时间： 2024-11-17 06:21:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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4页	27K
描述
Transistor

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TIS75-D26Z 数据手册

TIS75

N-Channel General Purpose Amplifier

•

This device is designed for low level analog switching, sample and

hold circuits and chopper stabilized amplifiers.

Sourced from process 54.

•

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings * T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-30

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

= 1.0µA, V = 0

-30

(BR)GSS

GSS

= 15V, V = 0

-2.0

-5.0

µA

= 15V, V = 0, T = 100°C

I (off)

Drain Cutoff Leakage Current

= 15V, V = -10V

-2.0

-5.0

µA

= 15V, V = -10V,

T = 100°C

(off)

Gate-Source Cutoff Voltage

= 20V, I = 4.0nA

-0.8

-4.0

On Characteristics *

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

= 15V, V = 0

DSS

(on)

≤ 0.1V, V = 0

Ω

Small Signal Characteristics

Input Capacitance

= 0, V = -10V, f = 1.0MHz

iss

rss

Reverse Transfer Capacitance

= 0, V = -10V, f = 1.0MHz

8.0

Switching Characteristics

Rise Time

(off) = -4.0V, V (on) = 0,

= 5.0mA, V = 10V

Turn-On Time

Turn-Off Time

100

off

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3.0%

Rev. A, June 2004

12 3 4

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