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TIS93

更新时间: 2024-11-15 22:42:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管
页数 文件大小 规格书
2页 25K
描述
PNP General Purpose Amplifier

TIS93 数据手册

 浏览型号TIS93的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
TIS93  
TO-92  
E
B
C
PNP General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 500 mA. Sourced from  
Process 63. See PN2907A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
800  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TIS93  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Rθ  
Thermal Resistance, Junction to Case  
83.3  
°C/W  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

TIS93 替代型号

型号 品牌 替代类型 描述 数据表
ZTX455STZ DIODES

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Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 CO

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