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TIS97/D26Z PDF预览

TIS97/D26Z

更新时间: 2024-09-25 14:45:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 293K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

TIS97/D26Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.72最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

TIS97/D26Z 数据手册

 浏览型号TIS97/D26Z的Datasheet PDF文件第2页浏览型号TIS97/D26Z的Datasheet PDF文件第3页浏览型号TIS97/D26Z的Datasheet PDF文件第4页浏览型号TIS97/D26Z的Datasheet PDF文件第5页浏览型号TIS97/D26Z的Datasheet PDF文件第6页浏览型号TIS97/D26Z的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
TIS97  
TO-92  
E
B
C
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced from  
Process 10. See PN100 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TIS97  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Rθ  
Thermal Resistance, Junction to Case  
83.3  
°C/W  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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