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TISP1070H3BJ

更新时间： 2024-11-16 03:59:43
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
7页 160K
描述
Overvoltage Protector Series

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中文翻译

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TISP1070H3BJ 技术参数

生命周期：Obsolete零件包装代码：DO-214AA
包装说明：SMALL OUTLINE, R-PDSO-C3针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.83
其他特性：UL RECOGNIZED最大转折电压：70 V
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大断态直流电压：58 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C3
通态非重复峰值电流：35 A元件数量：2
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified表面贴装：YES
端子形式：C BEND端子位置：DUAL
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP1070H3BJ 数据手册

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T
TISP1070H3BJ THRU TISP1120H3BJ  
N
IA  
L
P
S
M
N
E
O
L
IO  
C
B
S
S
A
R
H
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL  
THYRISTOR OVERVOLTAGE PROTECTORS  
E
IL  
o
V
A
V
*R  
A
TISP1xxxH3BJ Overvoltage Protector Series  
Overvoltage Protection for Negative Rail SLICs  
SMB03 Package (Top View)  
Dual High Current Protectors in a Space Efficient Package  
- 2 x 100 A 10/1000 Current Rating  
- SMB03 Package (3-pin Modified SMB/DO-214AA)  
50 % Space Saving over Two SMBs  
1
3
2
Ion-Implanted Breakdown Region  
- Precise and Stable Voltage  
MDXXCJA  
- Low Voltage Overshoot under Surge  
Device Symbol  
VDRM  
V(BO)  
Device Name  
1
3
V
V
(T or R)  
(R or T)  
TISP1070H3BJ  
TISP1080H3BJ  
TISP1095H3BJ  
TISP1120H3BJ  
-58  
-65  
-75  
-95  
-70  
-80  
-95  
-120  
Rated for International Surge Wave Shapes  
IPPSM  
SD1TAA  
Wave Shape  
Standard  
2
(G)  
A
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
500  
300  
200  
150  
120  
100  
10/160  
10/700  
10/560  
10/1000  
TIA-968-A (FCC Part 68)  
ITU-T K.20/21/45  
............................................... UL Recognized Component  
TIA-968-A (FCC Part 68)  
GR-1089-CORE  
Description  
These dual unidirectional thyristor devices protect SLICs and ISDN power feeds in central office, access and customer premises equipment  
against overvoltages on the telecom line. Each protector section consists of a voltage-triggered unidirectional thyristor with an anti-parallel  
diode. In the negative polarity, the thyristor allows signal voltages, without clipping, up to the maximum off-state voltage value, V  
, see  
DRM  
Figure 1. Voltages exceeding V  
are limited and will not exceed the breakover voltage, V  
, level. If sufficient current flows due to the  
DRM  
overvoltage, the thyristor switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the thyristor.  
(BO)  
When the diverted current falls below the holding current, I , level the thyristor switches off and restores normal system operation. Positive  
H
overvoltages are limited by the conduction of the anti-parallel diode.  
The TISP1xxxH3BJ is available in four voltages and has a 100 A 10/1000 current rating. These protectors have been designed particularly for  
use in equipment that must meet the following standards and recommendations: GR-1089-CORE, TIA-968-A (replaces FCC Part 68), ITU-T  
K.20, K.21 and K.45. Housed in a SMB03 package (3-pin modified SMB/DO-214AA), these parts are space efficient to replace protection  
designs of 100 A 10/1000 or less which use multiple SMBs or a 6-pin SMT package.  
How to Order  
For Standard  
Termination Finish  
Order As  
For Lead Free  
Termination Finish  
Order As  
Device  
Package  
Carrier  
Marking Code Std. Qty.  
1xxxH3 3000  
TISP1xxxH3BJ SMB03 (3-pin modified Embossed Tape Reeled TISP1xxxH3BJR  
SMB  
TISP1xxxH3BJR-S  
/DO-214AA)  
Insert xxx value corresponding to device name.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
JUNE 2003 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234567

中文翻译

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