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TISP1082

更新时间： 2024-01-01 08:17:01
品牌 Logo 应用领域
POINN 局域网
页数 文件大小 规格书
11页 250K
描述
DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

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TISP1082 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.73JESD-30 代码：R-PSIP-T3
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP1082 数据手册

 浏览型号TISP1082的Datasheet PDF文件第2页浏览型号TISP1082的Datasheet PDF文件第3页浏览型号TISP1082的Datasheet PDF文件第4页浏览型号TISP1082的Datasheet PDF文件第5页浏览型号TISP1082的Datasheet PDF文件第6页浏览型号TISP1082的Datasheet PDF文件第7页 
TISP1082  
DUAL ASYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
Copyright © 1997, Power Innovations Limited, UK  
NOVEMBER 1986 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
TO-220 PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
A(T)  
C(G)  
B(R)  
1
2
3
V(Z)  
V(BO)  
DEVICE  
V
V
‘1082  
- 58  
- 82  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
Pin 2 is in electrical contact with the mounting base.  
MDXXANA  
Rated for International Surge Wave Shapes  
ITSP  
WAVE SHAPE  
STANDARD  
A
150  
60  
45  
38  
50  
50  
50  
50  
8/20 µs  
10/160 µs  
10/560 µs  
0.2/310 µs  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
device symbol  
A(T)  
B(R)  
FTZ R12  
10/700 µs  
VDE 0433  
CCITT IX K17/K20  
REA PE-60  
10/1000 µs  
●
UL Recognized, E132482  
C(G)  
description  
The TISP1082 is designed specifically for  
telephone line card protection against lightning  
and transients induced by a.c. power lines.  
These devices will supress voltage transients  
between terminals A and C, B and C, and A and  
B.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation.  
Negative transients are initially clipped by zener  
action until the voltage rises to the breakover  
level, which causes the device to crowbar. The  
high crowbar holding current prevents d.c.  
latchup as the transient subsides. Positive  
transients are clipped by diode action.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
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