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TISP1120F3DR-S

更新时间： 2024-09-29 21:17:47
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
5页 246K
描述
Silicon Surge Protector, 120V V(BO) Max, 4.3A, SOIC-8

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中文翻译

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TISP1120F3DR-S 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.81最大转折电压：120 V
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大断态直流电压：97 V
JESD-30 代码：R-PDSO-G8通态非重复峰值电流：4.3 A
元件数量：2端子数量：8
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP1120F3DR-S 数据手册

 浏览型号TISP1120F3DR-S的Datasheet PDF文件第2页浏览型号TISP1120F3DR-S的Datasheet PDF文件第3页浏览型号TISP1120F3DR-S的Datasheet PDF文件第4页浏览型号TISP1120F3DR-S的Datasheet PDF文件第5页 
TISP1120F3D  
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL  
THYRISTOR OVERVOLTAGE PROTECTOR  
The Model TISP1120F3D is  
currently available, but not  
recommended for new designs.  
TISP1120F3D Overvoltage Protector  
Ion-Implanted Breakdown Region  
- Precise and Stable Voltage  
8-SOIC Package (Top View)  
1
8
7
6
5
G
G
G
G
T
NC  
NC  
R
Planar Passivated Junctions  
2
- Low Off-State Current <10 μA  
3
4
Low Voltage Overshoot Under Surge  
MDXXAEB  
VDRM  
V(BO)  
V
Device Name  
V
NC - No internal connection  
TISP1120F3D  
-97  
-120  
Device Symbol  
Rated for International Surge Wave Shapes  
R
T
IPPSM  
Wave Shape  
Standard  
A
120  
70  
60  
50  
45  
35  
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
TIA-968-A  
10/160  
10/700  
10/560  
10/1000  
ITU-T K.20/21/45  
TIA-968-A  
SD1XAAa  
G
GR-1089-CORE  
Description  
This dual forward-conducting unidirectional overvoltage protector is designed for the overvoltage protection of ICs used for the SLIC  
(Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1120F3D  
limits voltages that exceed these supply rails.  
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by  
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current helps  
prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are designed to  
suppress and withstand the listed international lightning surges on any terminal pair.  
This monolithic protection device is fabricated in an ion-implanted planar structure to ensure precise and matched breakover control, and is  
virtually transparent to the system in normal operation.  
How to Order  
Device  
Package  
Carrier  
Marking Code Standard Quantity  
1120F3 2500  
Order As  
TISP1120F3D  
8-SOIC  
Embossed Tape Reeled  
TISP1120F3DR-S  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
JULY 2005 – REVISED . / 6%- "%2  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
12345

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