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TIP42AG PDF预览

TIP42AG

更新时间: 2024-11-18 08:48:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 94K
描述
Complementary Silicon Plastic Power Transistors

TIP42AG 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:2 weeks风险等级:0.56
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):65 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP42AG 数据手册

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TIP41, TIP41A, TIP41B,  
TIP41C (NPN); TIP42, TIP42A,  
TIP42B, TIP42C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
6 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
40-60-80-100 VOLTS,  
65 WATTS  
Features  
ꢀESD Ratings:  
Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
ꢀEpoxy Meets UL 94 V-0 @ 0.125 in  
ꢀPb-Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
MARKING  
DIAGRAM  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
CEO  
40  
60  
80  
100  
Vdc  
4
Collector-Base Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
40  
60  
80  
100  
Vdc  
TO-220AB  
CASE 221A  
STYLE 1  
CB  
TIP4xxG  
AYWW  
1
2
3
Emitter-Base Voltage  
Collector Current-  
V
5.0  
Vdc  
Adc  
EB  
Continuous  
Peak  
I
6.0  
10  
C
TIP4xx = Device Code  
= 1, 1A, 1B, 1C  
2, 2A, 2B, 2C  
Base Current  
I
2.0  
Adc  
B
xx  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
65  
0.52  
W
W/°C  
C
D
A
= Assembly Location  
= Year  
Y
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
2.0  
0.016  
W
W/°C  
A
D
WW  
G
= Work Week  
= Pb-Free Package  
Unclamped Inductive Load Energy  
(Note 1)  
E
62.5  
mJ  
Operating and Storage Junction,  
Temperature Range  
T , T  
J
–ꢁ65 to  
+150  
°C  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.67  
57  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.  
BE  
C
CC  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 7  
1
Publication Order Number:  
TIP41A/D  
 

TIP42AG 替代型号

型号 品牌 替代类型 描述 数据表
TIP41AG ONSEMI

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Complementary Silicon Plastic Power Transistors
TIP41BG ONSEMI

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Complementary Silicon Plastic Power Transistors
TIP42BG ONSEMI

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Complementary Silicon Plastic Power Transistors

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