TIP42B

更新时间： 2024-09-10 15:19:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	340K
描述
80V,6A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

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中文翻译

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数据手册

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TIP42B 数据手册

TIP42

TIP42A

TIP42B

TIP42C

www.centralsemi.com

DESCRIPTION:

PNP SILICON

POWER TRANSISTOR

The CENTRAL SEMICONDUCTOR TIP42 SERIES

types are PNP Epitaxial-Base Silicon Power

Transistors designed for power amplifier and high

speed switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

CBO

CEO

EBO

100

5.0

6.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

2.0

°C

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

2.0

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V (TIP41, TIP41A)

0.7

0.4

1.0

CEO

CES

EBO

=60V (TIP41B, TIP41C)

=Rated V

=5.0V

CEO

I =30mA (TIP41)

CEO

CE(SAT)

BE(ON)

I =30mA (TIP41A)

I =30mA (TIP41B)

I =30mA (TIP41C)

100

I =6.0A, I =0.6A

1.5

2.0

=4.0V, I =6.0A

=4.0V, I =0.3A

3.0

=4.0V, I =3.0A

=10V, I =0.5A, f=1.0kHz

=10V, I =0.5A, f=1.0MHz

MHz

μs

I =6.0A, I = I =0.6A, R =5.0Ω

0.4

0.7

off

B1 B2

I =6.0A, I = I =0.6A, R =5.0Ω

μs

B1 B2

R1 (13-December 2010)

中文翻译

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