Datasheet > TIP42B

TIP42B

更新时间： 2024-01-11 02:35:23

品牌	Logo	应用领域
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页数	文件大小	规格书
1页	59K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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TIP42B 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

TO-220

TIP42A/42B/42C TRANSISTOR (PNP)

FEATURES

1. BASE

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

-6

1 2 3

V_(BR)CBO

TIP42A : -60

TIP42B: -80

TIP42C: -100 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

-60

-80

Collector-base breakdown voltage

42A

42B

42C

42A

42B

42C

V(BR)_CBO

Ic= -1mA, I_E=0

-100

-60

Collector-emitter breakdown voltage

V(BR)_CEO

V(BR)_EBO

Ic= -30mA, I_B=0

I_E= -1mA,I_C=0

-80

-100

-5

Emitter-base breakdown voltage

Collector cut-off current

42A

42B

42C

V_CB=- 60V, I_E=0

I_CBO

-0.4

V_CB=- 80V, I_E=0

V_CB=-100V, I_E=0

Collector cut-off current

_CE= -30V, I_B= 0

_CE= -60V, I_B= 0

42A

42B

42C

-0.7

-1

I_CEO

I_EBO

V_EB=-5 V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE= -4V, I_C= -0.3A

DC current gain

h_FE(2)

V_CE=- 4V, I_C= -3A

V_CE(sat)

V_BE(on

I_C=-6A, I_B=-0.6A

V_CE= -4V, I_C=-6A

-1.5

-2

Collector-emitter saturation voltage

Base-emitter

voltage

_CE=-10V , I_C=-0.5A

f_T

MH_Z

Transition frequency

f =1MHz

中文翻译

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