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TIP42BG PDF预览

TIP42BG

更新时间: 2024-11-04 08:48:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 94K
描述
Complementary Silicon Plastic Power Transistors

TIP42BG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.9
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHz

TIP42BG 数据手册

 浏览型号TIP42BG的Datasheet PDF文件第2页浏览型号TIP42BG的Datasheet PDF文件第3页浏览型号TIP42BG的Datasheet PDF文件第4页浏览型号TIP42BG的Datasheet PDF文件第5页浏览型号TIP42BG的Datasheet PDF文件第6页 
TIP41, TIP41A, TIP41B,  
TIP41C (NPN); TIP42, TIP42A,  
TIP42B, TIP42C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
6 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
40-60-80-100 VOLTS,  
65 WATTS  
Features  
ꢀESD Ratings:  
Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
ꢀEpoxy Meets UL 94 V-0 @ 0.125 in  
ꢀPb-Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
MARKING  
DIAGRAM  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
CEO  
40  
60  
80  
100  
Vdc  
4
Collector-Base Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
40  
60  
80  
100  
Vdc  
TO-220AB  
CASE 221A  
STYLE 1  
CB  
TIP4xxG  
AYWW  
1
2
3
Emitter-Base Voltage  
Collector Current-  
V
5.0  
Vdc  
Adc  
EB  
Continuous  
Peak  
I
6.0  
10  
C
TIP4xx = Device Code  
= 1, 1A, 1B, 1C  
2, 2A, 2B, 2C  
Base Current  
I
2.0  
Adc  
B
xx  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
65  
0.52  
W
W/°C  
C
D
A
= Assembly Location  
= Year  
Y
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
2.0  
0.016  
W
W/°C  
A
D
WW  
G
= Work Week  
= Pb-Free Package  
Unclamped Inductive Load Energy  
(Note 1)  
E
62.5  
mJ  
Operating and Storage Junction,  
Temperature Range  
T , T  
J
–ꢁ65 to  
+150  
°C  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.67  
57  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.  
BE  
C
CC  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 7  
1
Publication Order Number:  
TIP41A/D  
 

TIP42BG 替代型号

型号 品牌 替代类型 描述 数据表
TIP42B ONSEMI

完全替代

POWER TRANSISTORS COMPLEMENTARY SILICON
TIP42AG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors
TIP41B ONSEMI

类似代替

POWER TRANSISTORS COMPLEMENTARY SILICON

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