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TIP42C PDF预览

TIP42C

更新时间: 2024-02-21 14:11:45
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管PC局域网
页数 文件大小 规格书
4页 39K
描述
Medium Power Linear Switching Applications

TIP42C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.3最大集电极电流 (IC):6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP42C 数据手册

 浏览型号TIP42C的Datasheet PDF文件第2页浏览型号TIP42C的Datasheet PDF文件第3页浏览型号TIP42C的Datasheet PDF文件第4页 
TIP42 SERIES(TIP42/42A/42B/42C)  
Medium Power Linear Switching Applications  
Complement to TIP41/41A/41B/41C  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP42  
- 40  
- 60  
- 80  
V
V
V
V
CBO  
CEO  
EBO  
: TIP42A  
: TIP42B  
: TIP42C  
- 100  
Collector-Emitter Voltage : TIP42  
- 40  
- 60  
- 80  
V
V
V
V
: TIP42A  
: TIP42B  
: TIP42C  
- 100  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
V
A
I
I
I
- 6  
C
-10  
A
CP  
B
-2  
A
P
P
Collector Dissipation (T =25°C)  
65  
2
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: TIP42  
I
= -30mA, I = 0  
-40  
-60  
-80  
V
V
V
V
C
B
: TIP42A  
: TIP42B  
: TIP42C  
-100  
I
Collector Cut-off Current  
: TIP42/42A  
CEO  
V
V
= -30V, I = 0  
-0.7  
-0.7  
mA  
mA  
CE  
CE  
B
: TIP42B/42C  
= -60V, I = 0  
B
I
Collector Cut-off Current  
: TIP42  
CES  
V
V
V
V
= -40V, V = 0  
-400  
-400  
-400  
-400  
µA  
µA  
µA  
µA  
CE  
CE  
CE  
CE  
EB  
: TIP42A  
: TIP42B  
: TIP42C  
= -60V, V = 0  
EB  
= -80V, V = 0  
EB  
= -100V, V = 0  
EB  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= -5V, I = 0  
-1  
mA  
EBO  
EB  
C
h
V
V
= -4V, I = -0.3A  
30  
15  
FE  
CE  
CE  
C
= -4V, I = -3A  
75  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= -6A, I = -600mA  
-1.5  
-2.0  
V
V
CE  
BE  
C
B
(sat)  
V
V
= -4V, I = -6A  
C
CE  
CE  
f
= -10V, I = -500mA  
3.0  
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

TIP42C 替代型号

型号 品牌 替代类型 描述 数据表
TIP42CTU FAIRCHILD

类似代替

PNP Epitaxial Silicon Transistor
BD244C FAIRCHILD

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Medium Power Linear and Switching Applications
TIP42CG ONSEMI

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Complementary Silicon Plastic Power Transistors

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