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TIP42CF PDF预览

TIP42CF

更新时间: 2024-11-16 22:49:51
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
2页 37K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

TIP42CF 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220IS, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.26
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):6 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP42CF 数据手册

 浏览型号TIP42CF的Datasheet PDF文件第2页 
SEMICONDUCTOR  
TIP42CF  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
A
C
FEATURES  
DIM MILLIMETERS  
U
A
B
C
D
E
F
10.30 MAX  
15.30 MAX  
2.70Ź0.30  
0.85 MAX  
Φ3.20Ź0.20  
3.00Ź0.30  
12.30 MAX  
0.75 MAX  
13.60Ź0.50  
3.90 MAX  
1.20  
Complementary to TIP41CF.  
E
S
G
H
J
R
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
T
L
L
K
L
M
N
O
P
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
M
1.30  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-100  
-100  
-5  
2.54  
D
D
4.50Ź0.20  
6.80  
V
Q
R
S
2.60Ź0.20  
10Ɓ  
V
N
N
H
25Ş  
T
DC  
Collector Current  
Pulse  
-6  
T
T
U
V
5Ş  
A
0.5  
ICP  
-10  
2.60Ź0.15  
3
2
1
1. BASE  
IB  
Base Current  
-2  
A
W
W
2. COLLECTOR  
3. EMITTER  
2
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
25  
TO-220IS  
Tj  
Junction Temperature  
150  
-55 150  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Emitter Sustaining Voltage  
Collector Cut-off Current  
SYMBOL  
VCEO(SUS)  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
IC=-30mA, IB=0  
-100  
-
-
-
-
-
-
-
-
-
-
-0.7  
-400  
-1  
V
mA  
A
ICEO  
ICES  
IEBO  
VCE=-60V, IB=0  
-
-
VCE=-100V, VEB=0  
VEB=-5V, IC=0  
Collector Cut-off Current  
Emitter Cut-off Current  
-
mA  
VCE=-4V, IC=-0.3A  
VCE=-4V, IC=-3A  
IC=-6A, IB=-600mA  
VCE=-4V, IC=-6A  
VCE=-10V, IC=-500mA  
30  
15  
-
-
hFE  
DC Current Gain  
75  
VCE(sat)  
VBE(on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
-1.5  
-2.0  
-
V
V
-
Transition Frequency  
3.0  
MHz  
2002. 6. 25  
Revision No : 0  
1/2  

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