Datasheet > TIP35CL-X-T3P-T

TIP35CL-X-T3P-T

更新时间： 2022-02-26 10:55:43

品牌	Logo	应用领域
友顺 - UTC		高功率电源
页数	文件大小	规格书
4页	143K
描述
HIGH POWER TRANSISTORS

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中文翻译

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数据手册

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TIP35CL-X-T3P-T 数据手册

TIP35C

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

Collector Peak Current

Base Current

I_CM

I_B

Total Dissipation (T_C=25 °C)

Junction Temperature

P_D

125

°C

T_J

+150

-65 ~ +150

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

Thermal Resistance Junction-Case

SYMBOL

MIN

TYP

MAX

UNIT

°C/W

θ_JC



ELECTRICAL CHARACTERISTICS (Tc =25°C, unless otherwise specified)

PARAMETER

Collector Cut-off Current (I_E= 0)

SYMBOL

I_CBO

TEST CONDITIONS

V_CB= 100 V

V_EB= 5 V

MIN TYP MAX UNIT

μA

Emitter Cut-off Current (I_C= 0)

I_EBO

Collector-Emitter Sustaining Voltage (I_B= 0)

V(_BR)CEOI_C= 50 mA

100

I_B= 1.5 A, I_C= 15 A

1.8

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(SAT)

I_B= 5 A, I_C= 25 A

V_CE= 5 V, I_C= 5 A

V_CE= 5 V, I_C= 1.5 A

V_CE= 4 V, I_C= 15 A

V_CE= 5 V, I_C= 1 A

V_BE(ON)

h_FE1

h_FE2

f_T

1.5

160

DC Current Gain

Transition Frequency

MHz

CLASSIFICATION OF h_FE1



RANK

RANGE

55~110

80~160

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R214-013.C

www.unisonic.com.tw

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