5秒后页面跳转
TIP32AAJ PDF预览

TIP32AAJ

更新时间: 2024-09-13 13:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 87K
描述
暂无描述

TIP32AAJ 数据手册

 浏览型号TIP32AAJ的Datasheet PDF文件第2页浏览型号TIP32AAJ的Datasheet PDF文件第3页浏览型号TIP32AAJ的Datasheet PDF文件第4页浏览型号TIP32AAJ的Datasheet PDF文件第5页浏览型号TIP32AAJ的Datasheet PDF文件第6页 
TIP31, TIP31A, TIP31B, TIP31C,  
(NPN), TIP32, TIP32A, TIP32B,  
TIP32C, (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
40−60−80−100 VOLTS,  
40 WATTS  
Features  
Collector−Emitter Saturation Voltage −  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
CE(sat)  
Collector−Emitter Sustaining Voltage −  
V
= 40 Vdc (Min) − TIP31, TIP32  
= 60 Vdc (Min) − TIP31A, TIP32A  
= 80 Vdc (Min) − TIP31B, TIP32B  
= 100 Vdc (Min) − TIP31C, TIP32C  
CEO(sus)  
MARKING  
DIAGRAM  
High Current Gain − Bandwidth Product  
= 3.0 MHz (Min) @ I = 500 mAdc  
f
T
C
Compact TO−220 AB Package  
Pb−Free Packages are Available*  
4
MAXIMUM RATINGS  
Rating  
TO−220AB  
CASE 221A  
STYLE 1  
TIP3xxG  
AYWW  
Symbol  
Value  
Unit  
Collector − Emitter Voltage TIP31, TIP32  
TIP31A, TIP32A  
V
40  
60  
80  
Vdc  
CEO  
1
2
3
TIP31B, TIP32B  
100  
TIP31C, TIP32C  
Collector−Base Voltage  
TIP31, TIP32  
TIP31A, TIP32A  
TIP31B, TIP32B  
TIP31C, TIP32C  
V
40  
60  
80  
Vdc  
CB  
TIP3xx = Device Code  
xx  
= 1, 1A, 1B, 1C,  
2, 2A, 2B, 2C,  
= Assembly Location  
= Year  
100  
Emitter−Base Voltage  
Collector Current  
V
5.0  
Vdc  
Adc  
EB  
A
Y
Continuous  
Peak  
I
3.0  
5.0  
C
B
WW  
G
= Work Week  
Pb−Free Package  
Base Current  
I
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25_C  
40  
0.32  
C
W
W/_C  
ORDERING INFORMATION  
Derate above 25_C  
See detailed ordering and shipping information in the package  
Total Power Dissipation  
P
dimensions section on page 2 of this data sheet.  
D
@ T = 25_C  
2.0  
0.016  
A
W
Derate above 25_C  
W/_C  
Unclamped Inductive Load Energy (Note 1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
_C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W  
C
CC  
BE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 10  
TIP31A/D  

与TIP32AAJ相关器件

型号 品牌 获取价格 描述 数据表
TIP32AAK ONSEMI

获取价格

3A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP32AAN ONSEMI

获取价格

3A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP32AAU ONSEMI

获取价格

3A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP32A-BP MCC

获取价格

Silicon PNP Power Transistors
TIP32A-BP-HF MCC

获取价格

Power Bipolar Transistor,
TIP32ABV ONSEMI

获取价格

TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur
TIP32AC MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP32A-DR6259 RENESAS

获取价格

5A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP32A-DR6260 RENESAS

获取价格

5A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP32A-DR6269 RENESAS

获取价格

5A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB