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TIP30A PDF预览

TIP30A

更新时间: 2024-11-04 08:48:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管局域网
页数 文件大小 规格书
4页 40K
描述
Medium Power Linear Switching Applications

TIP30A 数据手册

 浏览型号TIP30A的Datasheet PDF文件第2页浏览型号TIP30A的Datasheet PDF文件第3页浏览型号TIP30A的Datasheet PDF文件第4页 
TIP30 Series(TIP30/30A/30B/30C)  
Medium Power Linear Switching Applications  
Complementary to TIP29/29A/29B/29C  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP30  
- 40  
- 60  
- 80  
V
V
V
V
CBO  
CEO  
EBO  
: TIP30A  
: TIP30B  
: TIP30C  
- 100  
Collector-Emitter Voltage : TIP30  
- 40  
- 60  
- 80  
V
V
V
V
: TIP30A  
: TIP30B  
: TIP30C  
- 100  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 1  
V
A
I
I
I
C
- 3  
A
CP  
B
- 0.4  
30  
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
2
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: TIP30  
I
= -30mA, I = 0  
-40  
-60  
-80  
V
V
V
V
C
B
: TIP30A  
: TIP30B  
: TIP30C  
-100  
I
Collector Cut-off Current  
: TIP30/30A  
CEO  
V
V
= -30V, I = 0  
= -60V, I = 0  
B
-0.3  
-0.3  
mA  
mA  
CE  
CE  
B
: TIP30B/30C  
I
Collector Cut-off Current  
: TIP30  
CES  
V
V
V
V
= -40V, V = 0  
-200  
-200  
-200  
-200  
µA  
µA  
µA  
µA  
CE  
CE  
CE  
CE  
EB  
: TIP30A  
: TIP30B  
: TIP30C  
= -60V, V = 0  
EB  
= -80V, V = 0  
EB  
= -100V, V = 0  
EB  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= -5V, I = 0  
-1.0  
mA  
EBO  
EB  
C
h
V
V
= -4V,I = -0.2A  
40  
15  
FE  
CE  
CE  
C
= -4V, I = -1A  
75  
-0.7  
-1.3  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= -1A, I = -125mA  
V
V
CE  
BE  
C
B
(sat)  
V
V
= -4V, I = -1A  
C
CE  
CE  
f
= -10V, I = -200mA  
3.0  
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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