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TIP29

更新时间: 2024-11-02 06:02:19
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 156K
描述
1.0 Amp Complementary Silicon Power Transistors

TIP29 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.05
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP29 数据手册

 浏览型号TIP29的Datasheet PDF文件第2页浏览型号TIP29的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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TIP29,A,B,C(NPN)  
TIP30,A,B,C(PNP)  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
1.0 Amp  
RoHS Compliant. See ordering information)  
Complementary  
x
x
Marking: Type Number  
R
th(jc) is 4.167OC/W, R  
Case Material: Molded Plastic. UL Flammability  
is 62.5OC/W  
th(ja)  
Silicon Power  
Transistors  
Classification Rating 94V-0  
Maximum Ratings  
Symbol  
Rating  
Rating  
40  
Unit  
TIP29, TIP30  
VCEO  
VCBO  
Collector-Emitter Voltage  
TIP29A, TIP30A  
TIP29B, TIP30B  
TIP29C, TIP30C  
60  
80  
100  
5.0  
1.0  
3.0  
V
TO-220  
Collector-Base Voltage  
Emitter-Base Voltage  
VEB  
IC  
V
A
A
C
Collector Current- Continuous  
Peak (1)  
F
IB  
PD  
Base Current-Continuous  
0.4  
Q
Total power dissipation @T =25OC  
30  
0.24  
-55 to +150  
-55 to +150  
W
C
T
Derate above 25OC  
Junction Temperature  
Storage Temperature  
W/OC  
TJ,  
TSTG  
OC  
OC  
U
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
H
OFF CHARACTERISTICS  
K
VCEO(SUS) Collector-Emitter Sustaining Voltage(note 2)  
(I =30mAdc, IB=0)  
C
TIP29, TIP30  
TIP29A, TIP30A  
TIP29B, TIP30B  
TIP29C, TIP30C  
40  
60  
80  
---  
---  
---  
---  
Vdc  
J
100  
IEBO  
ICES  
Emitter-Base Cutoff Current  
---  
1.0  
mAdc  
R
G
(VEB=5.0Vdc, I =0)  
C
N
Collector Cutoff Current  
(VCE=40V, VEB=0)  
TIP29, TIP30  
---  
---  
---  
---  
200  
200  
200  
200  
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
(VCE=60V,VEB=0)  
(VCE=80V,VEB=0)  
(VCE=100V, VEB=0)  
TIP29 A, TIP30A  
TIP29 B, TIP30B  
TIP29 C, TIP30C  
uAdc  
ICEO  
Collector Cutoff Current  
DIMENSIONS  
(VCE=30Vdc, I =0)  
---  
---  
0.3  
0.3  
B
INCHES  
MM  
TIP29, TIP29A, TIP30, TIP30A  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
MAX  
.625  
mAdc  
----  
.560  
.380  
.140  
(VCE=60Vdc, I =0)  
B
B
C
.420  
.190  
TIP29B, TIP29C, TIP30B, TIP30C  
3.56  
4.82  
ON CHARACTERISTICS(2)  
hFE(1)  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
DC Current Gain  
G
H
J
(I =0.2Adc, VCE=4.0Vdc)  
40  
15  
---  
75  
C
(I =1.0Adc, VCE=4.0Vdc)  
C
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
VCE(sat)  
VBE(ON)  
fT  
Collector-Emitter Saturation Voltage  
(I =1.0Adc, IB=125mAdc)  
---  
0.7  
Vdc  
Vdc  
C
N
.190  
.210  
4.83  
5.33  
Base-Emitter On Voltage  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
(I =1.0Adc,VCE=4.0Adc)  
Current-Gain-Bandwidth Product  
---  
3.0  
1.3  
---  
C
(note 3)  
MH  
Z
(I =200mAdc, VCE=10Vdc,  
C
f=1.0MH )  
Z
.045  
1.15  
hfe  
Small-Signal Current Gain  
20  
---  
---  
(IC=0.2Adc, VCE=10Vdc, f=1.0KHz )  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
2. Pulse Test: Pulse Width=300us, Duty Cycle <2.0%  
3. f T=| h | x f test  
fe  
www.mccsemi.com  
Revision: 3  
2008/01/01  
1 of 3  

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