Datasheet > TIP2955

TIP2955

更新时间： 2024-11-30 22:42:15

品牌	Logo	应用领域
POINN		晶体晶体管开关局域网
页数	文件大小	规格书
6页	98K
描述
PNP SILICON POWER TRANSISTOR

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TIP2955 数据手册

TIP2955

PNP SILICON POWER TRANSISTOR

JANUARY 1972 - REVISED MARCH 1997

●

Designed for Complementary Use with the

TIP3055 Series

SOT-93 PACKAGE

(TOP VIEW)

●

90 W at 25°C Case Temperature

15 A Continuous Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (I_E= 0)

V_CBO

V_CER

V_EBO

I_C

-100

Collector-emitter voltage (I_B= 0) (see Note 1)

Emitter-base voltage

-70

-7

-15

Continuous collector current

Continuous base current

I_B

-7

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

P_tot

°C

3.5

½LI_C

62.5

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies when the base-emitter resistance R_BE= 100 W.

2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -10 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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