TIP2955F

更新时间： 2024-12-01 03:59:43

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
3页	69K
描述
POWER TRANSISTORS

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中文翻译

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数据手册

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TIP2955F 数据手册

Transys

Electronics

I M I T E D

POWER TRANSISTORS

TIP2955F PNP

TIP3055F NPN

TO- 3P Fully Isolated

Plastic Package

Designed for General Purpose Switching and Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

V_CEO

V_CER

V_CB

UNIT

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

100

V_EB

7.0

I_C

Collector Current - Continuous

Base Current

I_B

7.0

Total Power Dissipation upto T_c=25º C

Derate above 25º C

P_D

0.72

W/ ºC

ºC

T_j, T_stg

- 65 to +150

Operating And Storage Junction

Temperature Range

THERMAL RESISTANCE

From Junction to case

From Junction to Ambient

R_th(jc)

R_th(ja)

1.39

35.7

ºC/W

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

TEST CONDITION

I_C= 30 mA, I_B= 0

MIN

TYP MAX

DESCRIPTION

SYMBOL

V_CEO(sus)

I_CER

UNIT

Collector-Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

V_CE=70V, R_BE=100W

V_CE= 30 V, I_B=0

1.0

0.7

5.0

I_CEO

I_CEV

V_CE=100V, V_BE(off)=1.5 V

V_BE= 7.0 V, I_C= 0

I_EBO

h_FE

V_CE(sat)

V_BE(on)

I_C= 4.0 A, V_CE= 4.0 V

I_C= 10 A, V_CE= 4.0 V

I_C= 4.0 A, I_B= 400 mA

I_C= 10 A, I_B= 3.3 A

I_C= 4.0 A, V_CE= 4.0 V

5.0

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

1.1

3.0

1.8

Second Breakdown

I_{S / b}

V_CE= 30 V, t = 1.0s,

Nonrepetitive

Second Breakdown Collector Current

with Base Forward Biased

3.0

12 3

中文翻译

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