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TIP29A

更新时间: 2024-12-01 08:48:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 82K
描述
isc Silicon NPN Power Transistors

TIP29A 数据手册

 浏览型号TIP29A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
TIP29A  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 60V(Min)  
·Collector-Emitter Saturation Voltage-  
: VCE(sat) = 0.7V(Max.)@IC= 1.0A  
·Complement to Type TIP30A  
APPLICATIONS  
·Designed for use in general purpose amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-Pulse  
Base Current  
VALUE  
UNIT  
V
60  
60  
V
5
1
V
A
ICM  
3
A
IB  
0.4  
A
Collector Power Dissipation  
TC=25  
PC  
30  
W
Tj  
Junction Temperature  
150  
-65~150  
Storage Ttemperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
4.17  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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