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TIP2955 PDF预览

TIP2955

更新时间: 2024-11-30 22:42:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
4页 104K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 数据手册

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Order this document  
by TIP3055/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose switching and amplifier applications.  
DC Current Gain — h  
Collector–Emitter Saturation Voltage — V  
Excellent Safe Operating Area  
= 2070 @ I = 4.0 Adc  
FE C  
15 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
= 1.1 Vdc (Max) @ I = 4.0 Adc  
C
CE(sat)  
MAXIMUM RATINGS  
60 VOLTS  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
90 WATTS  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
V
V
CEO  
70  
CER  
V
CB  
100  
7.0  
1 5  
V
EB  
I
C
I
B
7.0  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
90  
0.72  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
CASE 340D–02  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.39  
35.7  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θJC  
θJA  
R
1000  
100  
V
= 4.0 V  
CE  
= 25°C  
T
J
TIP3055  
TIP2955  
10  
0.1  
0.2 0.3  
I
0.5 0.7 1.0  
2.0  
3.0  
5.0 7.0 10  
, COLLECTOR CURRENT (AMP)  
C
Figure 1. DC Current Gain  
REV 1  
Motorola, Inc. 1996

TIP2955 替代型号

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