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TIP122 PDF预览

TIP122

更新时间: 2024-11-18 04:28:27
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管局域网
页数 文件大小 规格书
2页 110K
描述
Si-Epitaxial Planar Darlington Power Transistors

TIP122 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.11外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

TIP122 数据手册

 浏览型号TIP122的Datasheet PDF文件第2页 
TIP120 ... TIP122  
TIP120 ... TIP122  
Si-Epitaxial Planar Darlington Power Transistors  
Si-Epitaxial Planar Darlington-Leistungs-Transistoren  
NPN  
NPN  
Version 2006-10-17  
10±0.2  
Max. power dissipation with cooling  
Max. Verlustleistung mit Kühlung  
65 W  
3.8  
4
Collector current  
Kollektorstrom  
5 A  
TO-220AB  
2.2 g  
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
1 2 3  
Weight approx.  
Gewicht ca.  
1.5  
0.9  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2.54  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
1 = B 2/4 = C 3 = E  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
TIP120  
60 V  
TIP121  
80 V  
TIP122  
100 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spg.  
Collector-Base-voltage – Kollektor-Basis-Spg.  
B open  
E open  
VCEO  
VCBO  
VEBO  
60 V  
80 V  
100 V  
Emitter-Base-voltage – Emitter-Basis-Spannung C open  
Power dissipation – Verlustleistung  
5 V  
without cooling – ohne Kühlung  
with cooling – mit Kühlung  
TA = 25°C  
TC = 25°C  
Ptot  
Ptot  
2 W 1)  
65 W  
Collector current – Kollektorstrom (dc)  
Peak Collector current – Kollektor-Spitzenstrom  
Base current – Basisstrom (dc)  
IC  
ICM  
IB  
5 A  
8 A  
120 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
IC = 0.5 A, VCE = 3 V  
IC = 3 A, VCE = 3 V  
hFE  
hFE  
1000  
1000  
Small signal current gain – Kleinsignal-Stromverstärkung  
IC = 3 A, VCE = 4 V, f = 1 MHz  
hfe  
4
1
2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case  
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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