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TIP120_08 PDF预览

TIP120_08

更新时间: 2024-11-07 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
5页 540K
描述
NPN Epitaxial Darlington Transistor

TIP120_08 数据手册

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October 2008  
TIP120/TIP121/TIP122  
NPN Epitaxial Darlington Transistor  
Medium Power Linear Switching Applications  
Complementary to TIP125/126/127  
Equivalent Circuit  
C
B
TO-220  
1
R1  
R2  
1.Base 2.Collector 3.Emitter  
E
R1 @ 8kW  
R2 @ 0.12kW  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
VCBO  
Collector-Base Voltage : TIP120  
60  
80  
100  
V
V
V
: TIP121  
: TIP122  
VCEO  
Collector-Emitter Voltage : TIP120  
60  
80  
100  
V
V
V
: TIP121  
: TIP122  
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
5
V
A
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
5
8
120  
A
mA  
W
W
°C  
°C  
PC  
Collector Dissipation (Ta=25°C)  
Collector Dissipation (TC=25°C)  
Junction Temperature  
2
65  
TJ  
150  
TSTG  
Storage Temperature  
- 65 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
© 2007 Fairchild Semiconductor Corporation  
TIP120/TIP121/TIP122 Rev. 1.0.0  
www.fairchildsemi.com  
1

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