Datasheet > TIP120F

TIP120F

更新时间： 2022-02-26 11:43:27

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描述
DARLINGTON TRANSISTOR (NPN)

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数据手册

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TIP120F 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)

TO-220F

TIP125F,126F,127F ^{DARLINGTON TRANSISTOR}(PNP)

1.BASE

2.COLLECTOR

3.EMITTER

FEATURES

Medium Power Complementary Silicon Transistors

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

TIP120F

TIP125F

TIP121F

TIP126F

TIP122F

TIP127F

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

P_C

R_θJA

R_θJC

T_J

62.5

1.92

150

℃/W

℃

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

TIP120F,TIP125F

TIP121F,TIP126F V(BR)

TIP122F,TIP127F

I_C= 1mA,I_E=0

100

CBO

Collector-emitter breakdown voltage TIP120F,TIP125F

TIP121F,TIP126F V_CEO(SUS) I_C= 30mA,I_B=0

TIP122F,TIP127F

100

Collector cut-off current

TIP120F,TIP125F

TIP121F,TIP126F

TIP122F,TIP127F

TIP120F,TIP125F

TIP121F,TIP126F

TIP122F,TIP127F

V_CB= 60 V, I_E=0

V_CB= 80 V, I_E=0

V_CB= 100V, I_E=0

V_CE=30 V, I_B=0

V_CE=40 V, I_B=0

I_CBO

0.2

I_CEO

0.5

V_CE=50 V, I_B=0

Emitter cut-off current

DC current gain

I_EBO

h_FE(1)

h_FE(2)

V_EB=5 V, I_C=0

V_CE= 3V, I_C=0.5A

V_CE= 3V, I_C=3 A

1000

I_C=3A,I_B=12mA

I_C=5 A,I_B=20mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

V_CE=3V, I_C=3 A

2.5

Output Capacitance

TIP125F,TIP126F,TIP127F

TIP120F,TIP121F,TIP122F

300

200

Cob

V_CB=10V, I_E=0,f=0.1MHz

www.cj-elec.com

D,May,2016

12 3

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