5秒后页面跳转
TIP117G PDF预览

TIP117G

更新时间: 2024-11-03 04:28:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 100K
描述
Plastic Medium-Power Complementary Silicon Transistors

TIP117G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:1.14
其他特性:LEADFORM OPTIONS ARE AVAILABLE外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):25 MHz
Base Number Matches:1

TIP117G 数据手册

 浏览型号TIP117G的Datasheet PDF文件第2页浏览型号TIP117G的Datasheet PDF文件第3页浏览型号TIP117G的Datasheet PDF文件第4页浏览型号TIP117G的Datasheet PDF文件第5页浏览型号TIP117G的Datasheet PDF文件第6页浏览型号TIP117G的Datasheet PDF文件第7页 
TIP110, TIP111, TIP112  
(NPN); TIP115, TIP116,  
TIP117 (PNP)  
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
DARLINGTON  
2 AMPERE  
Designed for general−purpose amplifier and low−speed switching  
applications.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−80−100 VOLTS, 50 WATTS  
Features  
High DC Current Gain −  
h
= 2500 (Typ) @ I  
= 1.0 Adc  
FE  
C
Collector−Emitter Sustaining Voltage − @ 30 mAdc  
MARKING  
DIAGRAM  
V
= 60 Vdc (Min) − TIP110, TIP115  
= 80 Vdc (Min) − TIP111, TIP116  
= 100 Vdc (Min) − TIP112, TIP117  
CEO(sus)  
4
Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.5 Vdc (Max) @ I  
= 2.0 Adc  
C
TO−220AB  
CASE 221A  
TIP11xG  
AYWW  
Monolithic Construction with Built−in Base−Emitter Shunt Resistors  
Pb−Free Packages are Available*  
STYLE 1  
1
2
3
TIP11x = Device Code  
x
A
Y
= 0, 1, 2, 5, 6, or 7  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
TIP110/D  

TIP117G 替代型号

型号 品牌 替代类型 描述 数据表
TIP127G ONSEMI

完全替代

Plastic Medium-Power Complementary Silicon Transistors
TIP32CG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors
TIP41CG ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors

与TIP117G相关器件

型号 品牌 获取价格 描述 数据表
TIP117L MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP117PNP CDIL

获取价格

PLASTIC POWER TRANSISTORS
TIP117S MOTOROLA

获取价格

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP117T MOTOROLA

获取价格

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP117TU ROCHESTER

获取价格

2A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
TIP117TU FAIRCHILD

获取价格

PNP Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 10
TIP117TU ONSEMI

获取价格

PNP外延硅达林顿晶体管
TIP117TU_NL FAIRCHILD

获取价格

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP117U MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP117U2 MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast